Design effects on the performance of high-speed Ge photo detectors

S. Lischke, D. Knoll, C. Mai, M. Kroh, D. Schmidt, A. Peczek, J. Kreisl, J. M. Lee, M. Kim, W. Y. Choi, L. Zimmermann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We investigate design effects on the opto-electrical frequency response of waveguide-coupled, lateral Ge p-i-n photodiodes to estimate the sensitivity of this response to diode fabrication tolerances and, in particular, to improve our understanding how diffusion of photo carriers acts on the response behavior.

Original languageEnglish
Title of host publication2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
PublisherIEEE Computer Society
Pages22-23
Number of pages2
ISBN (Electronic)9781509019038
DOIs
Publication statusPublished - 2016 Nov 8
Event13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, China
Duration: 2016 Aug 242016 Aug 26

Publication series

NameIEEE International Conference on Group IV Photonics GFP
Volume2016-November
ISSN (Print)1949-2081

Other

Other13th IEEE International Conference on Group IV Photonics, GFP 2016
CountryChina
CityShanghai
Period16/8/2416/8/26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Lischke, S., Knoll, D., Mai, C., Kroh, M., Schmidt, D., Peczek, A., Kreisl, J., Lee, J. M., Kim, M., Choi, W. Y., & Zimmermann, L. (2016). Design effects on the performance of high-speed Ge photo detectors. In 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016 (pp. 22-23). [7739076] (IEEE International Conference on Group IV Photonics GFP; Vol. 2016-November). IEEE Computer Society. https://doi.org/10.1109/GROUP4.2016.7739076