Design of a 22-nm FinFET-based SRAM with read buffer for near-threshold voltage operation

Juhyun Park, Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A near-threshold voltage ( Vth) operation circuit is important for both energy-and performance-constrained applications. The conventional 6-T SRAM bit-cell designed for super-Vth operation cannot achieve the target SRAM bit-cell margins such as the hold stability, read stability, and write ability margins in the near-Vth region. The recently proposed SRAM bit-cell s with read buffer suffer from the problems of low read 0 sensing margin and large read 1 sensing time in the near-Vth region. This paper proposes a read buffer with adjusted the number of fins or Vth to resolve the problems in the near-Vth region. This paper also proposes a design method for pull-up, pull-down, and pass-gate transistors to achieve the target hold stability and presents an effective write assist circuit to achieve the target write ability in the near-Vth region.

Original languageEnglish
Article number7093154
Pages (from-to)1698-1704
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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