Abstract
Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD contains large amounts of C which is condensed in the outlet. Because the condensed C close to the crystal growth front will influence on the thermodynamic equilibrium in the crystal growth, an optimal reactor design was highly required to exclude the effect of the condensed carbon. In this study, we report on a mass/heat transfer analysis using the finite element method (FEM) in an attempt to design an effective reactor that will minimize the effect of carbon condensation in the outlet. By applying the proposed reactor design to actual growth experiments, single 6H-SiC crystals with diameters of 50 mm were successfully grown from a 6H-SiC seed. This result confirms that the proposed reactor design can be used to effectively grow 6H-SiC crystals using TMS-based HTCVD.
| Original language | English |
|---|---|
| Pages (from-to) | 84-90 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 435 |
| DOIs | |
| Publication status | Published - 2016 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling. / Yoon, Ji Young; Geun Kim, Byeong; Nam, Deok Hui; Yoo, Chang Hyoung; Lee, Myung Hyun; Seo, Won Seon; Shul, Yong Gun; Lee, Won Jae; Jeong, Seong Min.
In: Journal of Crystal Growth, Vol. 435, 01.02.2016, p. 84-90.Research output: Contribution to journal › Article
TY - JOUR
T1 - Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling
AU - Yoon, Ji Young
AU - Geun Kim, Byeong
AU - Nam, Deok Hui
AU - Yoo, Chang Hyoung
AU - Lee, Myung Hyun
AU - Seo, Won Seon
AU - Shul, Yong Gun
AU - Lee, Won Jae
AU - Jeong, Seong Min
PY - 2016/2/1
Y1 - 2016/2/1
N2 - Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD contains large amounts of C which is condensed in the outlet. Because the condensed C close to the crystal growth front will influence on the thermodynamic equilibrium in the crystal growth, an optimal reactor design was highly required to exclude the effect of the condensed carbon. In this study, we report on a mass/heat transfer analysis using the finite element method (FEM) in an attempt to design an effective reactor that will minimize the effect of carbon condensation in the outlet. By applying the proposed reactor design to actual growth experiments, single 6H-SiC crystals with diameters of 50 mm were successfully grown from a 6H-SiC seed. This result confirms that the proposed reactor design can be used to effectively grow 6H-SiC crystals using TMS-based HTCVD.
AB - Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD contains large amounts of C which is condensed in the outlet. Because the condensed C close to the crystal growth front will influence on the thermodynamic equilibrium in the crystal growth, an optimal reactor design was highly required to exclude the effect of the condensed carbon. In this study, we report on a mass/heat transfer analysis using the finite element method (FEM) in an attempt to design an effective reactor that will minimize the effect of carbon condensation in the outlet. By applying the proposed reactor design to actual growth experiments, single 6H-SiC crystals with diameters of 50 mm were successfully grown from a 6H-SiC seed. This result confirms that the proposed reactor design can be used to effectively grow 6H-SiC crystals using TMS-based HTCVD.
UR - http://www.scopus.com/inward/record.url?scp=84949603965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949603965&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.11.039
DO - 10.1016/j.jcrysgro.2015.11.039
M3 - Article
AN - SCOPUS:84949603965
VL - 435
SP - 84
EP - 90
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -