Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling

Ji Young Yoon, Byeong Geun Kim, Deok Hui Nam, Chang Hyoung Yoo, Myung Hyun Lee, Won Seon Seo, Yong Gun Shul, Won Jae Lee, Seong Min Jeong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD contains large amounts of C which is condensed in the outlet. Because the condensed C close to the crystal growth front will influence on the thermodynamic equilibrium in the crystal growth, an optimal reactor design was highly required to exclude the effect of the condensed carbon. In this study, we report on a mass/heat transfer analysis using the finite element method (FEM) in an attempt to design an effective reactor that will minimize the effect of carbon condensation in the outlet. By applying the proposed reactor design to actual growth experiments, single 6H-SiC crystals with diameters of 50 mm were successfully grown from a 6H-SiC seed. This result confirms that the proposed reactor design can be used to effectively grow 6H-SiC crystals using TMS-based HTCVD.

Original languageEnglish
Pages (from-to)84-90
Number of pages7
JournalJournal of Crystal Growth
Volume435
DOIs
Publication statusPublished - 2016 Feb 1

Fingerprint

reactor design
exhaust gases
outlets
Exhaust gases
crystal growth
Chemical vapor deposition
Condensation
condensation
Crystallization
reactors
Crystal growth
vapor deposition
Carbon
carbon
thermodynamic equilibrium
Temperature
Crystals
crystals
seeds
finite element method

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Yoon, Ji Young ; Geun Kim, Byeong ; Nam, Deok Hui ; Yoo, Chang Hyoung ; Lee, Myung Hyun ; Seo, Won Seon ; Shul, Yong Gun ; Lee, Won Jae ; Jeong, Seong Min. / Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling. In: Journal of Crystal Growth. 2016 ; Vol. 435. pp. 84-90.
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Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling. / Yoon, Ji Young; Geun Kim, Byeong; Nam, Deok Hui; Yoo, Chang Hyoung; Lee, Myung Hyun; Seo, Won Seon; Shul, Yong Gun; Lee, Won Jae; Jeong, Seong Min.

In: Journal of Crystal Growth, Vol. 435, 01.02.2016, p. 84-90.

Research output: Contribution to journalArticle

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AU - Yoon, Ji Young

AU - Geun Kim, Byeong

AU - Nam, Deok Hui

AU - Yoo, Chang Hyoung

AU - Lee, Myung Hyun

AU - Seo, Won Seon

AU - Shul, Yong Gun

AU - Lee, Won Jae

AU - Jeong, Seong Min

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AB - Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD contains large amounts of C which is condensed in the outlet. Because the condensed C close to the crystal growth front will influence on the thermodynamic equilibrium in the crystal growth, an optimal reactor design was highly required to exclude the effect of the condensed carbon. In this study, we report on a mass/heat transfer analysis using the finite element method (FEM) in an attempt to design an effective reactor that will minimize the effect of carbon condensation in the outlet. By applying the proposed reactor design to actual growth experiments, single 6H-SiC crystals with diameters of 50 mm were successfully grown from a 6H-SiC seed. This result confirms that the proposed reactor design can be used to effectively grow 6H-SiC crystals using TMS-based HTCVD.

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