Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

Jiazhen Sheng, Taehyun Hong, Donghee Kang, Yeonjin Yi, Jun Hyung Lim, Jin Seong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm 2 V -1 s -1 ) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm 2 V -1 s -1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

Original languageEnglish
Pages (from-to)12683-12692
Number of pages10
JournalACS Applied Materials and Interfaces
Volume11
Issue number13
DOIs
Publication statusPublished - 2019 Apr 3

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Atomic layer deposition
Thin film transistors
Semiconductor materials
Amorphous semiconductors
Cost effectiveness
Threshold voltage
Oxides
Oxide films
Charge transfer
Polymers
Display devices
Degradation
Thin films
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Sheng, Jiazhen ; Hong, Taehyun ; Kang, Donghee ; Yi, Yeonjin ; Lim, Jun Hyung ; Park, Jin Seong. / Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 13. pp. 12683-12692.
@article{6075448b55ee40be9203ed2db3e448bb,
title = "Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications",
abstract = "Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm 2 V -1 s -1 ) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm 2 V -1 s -1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.",
author = "Jiazhen Sheng and Taehyun Hong and Donghee Kang and Yeonjin Yi and Lim, {Jun Hyung} and Park, {Jin Seong}",
year = "2019",
month = "4",
day = "3",
doi = "10.1021/acsami.9b02999",
language = "English",
volume = "11",
pages = "12683--12692",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "13",

}

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications. / Sheng, Jiazhen; Hong, Taehyun; Kang, Donghee; Yi, Yeonjin; Lim, Jun Hyung; Park, Jin Seong.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 13, 03.04.2019, p. 12683-12692.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

AU - Sheng, Jiazhen

AU - Hong, Taehyun

AU - Kang, Donghee

AU - Yi, Yeonjin

AU - Lim, Jun Hyung

AU - Park, Jin Seong

PY - 2019/4/3

Y1 - 2019/4/3

N2 - Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm 2 V -1 s -1 ) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm 2 V -1 s -1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

AB - Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm 2 V -1 s -1 ) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm 2 V -1 s -1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

UR - http://www.scopus.com/inward/record.url?scp=85063404097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063404097&partnerID=8YFLogxK

U2 - 10.1021/acsami.9b02999

DO - 10.1021/acsami.9b02999

M3 - Article

C2 - 30859809

AN - SCOPUS:85063404097

VL - 11

SP - 12683

EP - 12692

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 13

ER -