Determination of bonding structure of Si, Ge, and N incorporated amorphous carbon films by near-edge x-ray absorption fine structure and ultraviolet Raman spectroscopy

Hae Suk Jung, Hyung-Ho Park, I. R. Mendieta, D. A. Smith

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A comparative analysis of bonding structure in Si, Ge and N incorporated amorphous carbon (a-C) films by using near-edge X-ray absorption fine structure (NEXAFS) and ultraviolet (UV) Raman spectroscopy was presented. It was found that incorporation of Si, Ge and N plays a critical role in increasing sp 3 bonds. It was shown that incorporated Si and Ge atoms substitute C atoms and open up the ring structure, promotes the sp3 hybridized bonds with its neighboring atoms. The results showed that N incorporated a-C, the increased sp3 fraction, due to five-membered ring structure, gives rise to a cross linking between ring structures by sp3 hybridized bonds.

Original languageEnglish
Pages (from-to)1013-1018
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number2
DOIs
Publication statusPublished - 2004 Jul 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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