A comparative analysis of bonding structure in Si, Ge and N incorporated amorphous carbon (a-C) films by using near-edge X-ray absorption fine structure (NEXAFS) and ultraviolet (UV) Raman spectroscopy was presented. It was found that incorporation of Si, Ge and N plays a critical role in increasing sp 3 bonds. It was shown that incorporated Si and Ge atoms substitute C atoms and open up the ring structure, promotes the sp3 hybridized bonds with its neighboring atoms. The results showed that N incorporated a-C, the increased sp3 fraction, due to five-membered ring structure, gives rise to a cross linking between ring structures by sp3 hybridized bonds.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2004 Jul 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)