Determination of doping density in GaAs semiconductor by wavelength-dependent photoacoustic spectroscopy

Jong Tae Lim, Ok Lim Choi, Doo Wan Boo, Joong Gill Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

Original languageEnglish
Pages (from-to)895-898
Number of pages4
JournalBulletin of the Korean Chemical Society
Volume35
Issue number3
DOIs
Publication statusPublished - 2014 Mar 20

Fingerprint

Photoacoustic spectroscopy
Photoacoustic effect
Doping (additives)
Semiconductor materials
Wavelength
Energy gap
Spectroscopy
Derivatives
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

@article{a5c4359dccc1419e86d9bff5c38884e2,
title = "Determination of doping density in GaAs semiconductor by wavelength-dependent photoacoustic spectroscopy",
abstract = "The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.",
author = "Lim, {Jong Tae} and Choi, {Ok Lim} and Boo, {Doo Wan} and Choi, {Joong Gill}",
year = "2014",
month = "3",
day = "20",
doi = "10.5012/bkcs.2014.35.3.895",
language = "English",
volume = "35",
pages = "895--898",
journal = "Bulletin of the Korean Chemical Society",
issn = "0253-2964",
publisher = "Korean Chemical Society",
number = "3",

}

Determination of doping density in GaAs semiconductor by wavelength-dependent photoacoustic spectroscopy. / Lim, Jong Tae; Choi, Ok Lim; Boo, Doo Wan; Choi, Joong Gill.

In: Bulletin of the Korean Chemical Society, Vol. 35, No. 3, 20.03.2014, p. 895-898.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Determination of doping density in GaAs semiconductor by wavelength-dependent photoacoustic spectroscopy

AU - Lim, Jong Tae

AU - Choi, Ok Lim

AU - Boo, Doo Wan

AU - Choi, Joong Gill

PY - 2014/3/20

Y1 - 2014/3/20

N2 - The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

AB - The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=84896505685&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896505685&partnerID=8YFLogxK

U2 - 10.5012/bkcs.2014.35.3.895

DO - 10.5012/bkcs.2014.35.3.895

M3 - Article

AN - SCOPUS:84896505685

VL - 35

SP - 895

EP - 898

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

SN - 0253-2964

IS - 3

ER -