Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement

Woong Joon Hwang, Tae Hee Lee, Lan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This paper reports on the experimental methods of the determination of junction temperature and thermal resistance in GaN-based LEDs. For the direct temperature measurement and investigation of thermal distribution on the operating LED chip, nematic liquid crystal thermographic technique was employed. Hot spot was observed and its size was increasing with the driving input power. The initial hot spot with an anisotropic-isotropic transition of 29°C appeared near the cathode region under the drive voltage of 2.95 V and the current of 8.1 mA. The size of the hot spot was increased with input power. Micro thermocouple was embedded into the epoxy package for the investigation of its size effects on thermal behavior. For the specific structure of LED package investigated the thermal resistances were calculated to be 265°C/W and 215°C/W for the low epoxy domed package and high epoxy domed package, respectively.

Original languageEnglish
Pages (from-to)2429-2432
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number10
DOIs
Publication statusPublished - 2004 Nov 8

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thermal resistance
temperature measurement
light emitting diodes
temperature
thermocouples
cathodes
liquid crystals
chips
electric potential

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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abstract = "This paper reports on the experimental methods of the determination of junction temperature and thermal resistance in GaN-based LEDs. For the direct temperature measurement and investigation of thermal distribution on the operating LED chip, nematic liquid crystal thermographic technique was employed. Hot spot was observed and its size was increasing with the driving input power. The initial hot spot with an anisotropic-isotropic transition of 29°C appeared near the cathode region under the drive voltage of 2.95 V and the current of 8.1 mA. The size of the hot spot was increased with input power. Micro thermocouple was embedded into the epoxy package for the investigation of its size effects on thermal behavior. For the specific structure of LED package investigated the thermal resistances were calculated to be 265°C/W and 215°C/W for the low epoxy domed package and high epoxy domed package, respectively.",
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Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement. / Hwang, Woong Joon; Lee, Tae Hee; Kim, Lan; Shin, Moo Whan.

In: Physica Status Solidi C: Conferences, Vol. 1, No. 10, 08.11.2004, p. 2429-2432.

Research output: Contribution to journalArticle

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