Determination of local bonding configuration and structural modification in amorphous carbon with silicon incorporation

Hae Suk Jung, Hyung-Ho Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The bonding configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Six) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation and improving the thermal stability. The composition, bonding configuration, structure and electrical properties of a-C:Six were investigated as a function of Si concentration. For Si concentration below 10 at.%, incorporated Si substituted for sp2 C-bonded clusters and the electrical resistivity of a-C:Six increased significantly. From 10 to 23 at.%, the fraction of sp3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.%, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Six decreased. From the above results, different structural and bonding characteristics of a-C:Six were established and this transition of structural evolution is closely related to the incorporated Si content in film.

Original languageEnglish
Pages (from-to)1373-1377
Number of pages5
JournalDiamond and Related Materials
Volume12
Issue number8
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Amorphous carbon
Silicon
carbon
silicon
configurations
residual stress
Residual stresses
electrical resistivity
Electric properties
Thermodynamic stability
thermal stability
electrical properties
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "The bonding configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Six) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation and improving the thermal stability. The composition, bonding configuration, structure and electrical properties of a-C:Six were investigated as a function of Si concentration. For Si concentration below 10 at.{\%}, incorporated Si substituted for sp2 C-bonded clusters and the electrical resistivity of a-C:Six increased significantly. From 10 to 23 at.{\%}, the fraction of sp3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.{\%}, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Six decreased. From the above results, different structural and bonding characteristics of a-C:Six were established and this transition of structural evolution is closely related to the incorporated Si content in film.",
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Determination of local bonding configuration and structural modification in amorphous carbon with silicon incorporation. / Jung, Hae Suk; Park, Hyung-Ho.

In: Diamond and Related Materials, Vol. 12, No. 8, 01.01.2003, p. 1373-1377.

Research output: Contribution to journalArticle

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