The bonding configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Six) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation and improving the thermal stability. The composition, bonding configuration, structure and electrical properties of a-C:Six were investigated as a function of Si concentration. For Si concentration below 10 at.%, incorporated Si substituted for sp2 C-bonded clusters and the electrical resistivity of a-C:Six increased significantly. From 10 to 23 at.%, the fraction of sp3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.%, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Six decreased. From the above results, different structural and bonding characteristics of a-C:Six were established and this transition of structural evolution is closely related to the incorporated Si content in film.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering