Abstract
High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.
| Original language | English |
|---|---|
| Pages (from-to) | 2815-2817 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1993 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction. / Choi, Woo Young; Fonstad, Clifton G.
In: Applied Physics Letters, Vol. 62, No. 22, 01.12.1993, p. 2815-2817.Research output: Contribution to journal › Article
TY - JOUR
T1 - Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction
AU - Choi, Woo Young
AU - Fonstad, Clifton G.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.
AB - High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.
UR - http://www.scopus.com/inward/record.url?scp=3943080536&partnerID=8YFLogxK
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U2 - 10.1063/1.109219
DO - 10.1063/1.109219
M3 - Article
AN - SCOPUS:3943080536
VL - 62
SP - 2815
EP - 2817
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
ER -