Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction

Woo Young Choi; Clifton G. Fonstad

doi:10.1063/1.109219

Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction

Woo Young Choi, Clifton G. Fonstad

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.

Original language	English
Pages (from-to)	2815-2817
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	22
DOIs	https://doi.org/10.1063/1.109219
Publication status	Published - 1993 Dec 1

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Choi, W. Y., & Fonstad, C. G. (1993). Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction. Applied Physics Letters, 62(22), 2815-2817. https://doi.org/10.1063/1.109219

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10.1063/1.109219