Abstract
High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.
| Original language | English |
|---|---|
| Pages (from-to) | 2815-2817 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1993 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Choi, W. Y., & Fonstad, C. G. (1993). Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction. Applied Physics Letters, 62(22), 2815-2817. https://doi.org/10.1063/1.109219