Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x-ray diffraction

Woo Young Choi, Clifton G. Fonstad

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Abstract

High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 Å for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.

Original languageEnglish
Pages (from-to)2815-2817
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number22
DOIs
Publication statusPublished - 1993 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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