Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction

K. H.L. Zhang, A. Regoutz, R. G. Palgrave, D. J. Payne, R. G. Egdell, A. Walsh, S. P. Collins, D. Wermeille, R. A. Cowley

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.

Original languageEnglish
Article number233301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number23
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Poisson ratio
Synchrotrons
Lattice constants
lattice parameters
synchrotrons
x ray diffraction
Diffraction
X rays
Thin films
Substrates
thin films
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Zhang, K. H.L. ; Regoutz, A. ; Palgrave, R. G. ; Payne, D. J. ; Egdell, R. G. ; Walsh, A. ; Collins, S. P. ; Wermeille, D. ; Cowley, R. A. / Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 84, No. 23.
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Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction. / Zhang, K. H.L.; Regoutz, A.; Palgrave, R. G.; Payne, D. J.; Egdell, R. G.; Walsh, A.; Collins, S. P.; Wermeille, D.; Cowley, R. A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 23, 233301, 01.12.2011.

Research output: Contribution to journalArticle

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