Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction

K. H.L. Zhang, A. Regoutz, R. G. Palgrave, D. J. Payne, R. G. Egdell, A. Walsh, S. P. Collins, D. Wermeille, R. A. Cowley

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Abstract

The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.

Original languageEnglish
Article number233301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number23
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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