Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Sung Jin Mun, Jeong M. Choi, Kwang H. Lee, Kimoon Lee, Seongil Im

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.

Original languageEnglish
Article number233301
JournalApplied Physics Letters
Volume93
Issue number23
DOIs
Publication statusPublished - 2008 Dec 19

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transistors
thin films
surface energy
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Mun, Sung Jin ; Choi, Jeong M. ; Lee, Kwang H. ; Lee, Kimoon ; Im, Seongil. / Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface. In: Applied Physics Letters. 2008 ; Vol. 93, No. 23.
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Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface. / Mun, Sung Jin; Choi, Jeong M.; Lee, Kwang H.; Lee, Kimoon; Im, Seongil.

In: Applied Physics Letters, Vol. 93, No. 23, 233301, 19.12.2008.

Research output: Contribution to journalArticle

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