Deterministic assembly of ultrathin metal oxide-semiconductor field-effect transistors released from the surfaces of bulk wafers with (111) orientation provides a route to high quality electronics on nearly any type of substrate. Device parameters and bias stability characteristics from transistors on sheets of plastic confirm the effectiveness of the approach and the critical roles of thermally grown layers of silicon dioxide for the gate dielectrics and passivation layers. Systematic studies of the anisotropic etching processes used to release the devices illustrate capabilities into the sub-micron thickness regime, with beneficial effects on the bending stiffness and degree of bendability.
Bibliographical noteFunding Information:
This work was supported by a National Security Science and Engineering Faculty Fellowship (JAR), a grant from the US Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439 (JAR), Basic Science Research Program through the National Research Foundation of Korea Grant funded by the Ministry of Science, ICT & Future Planning (2009-0083540)(TK). HJC also acknowledges the start-up support by the University of Alberta. The experiments used facilities at the Materials Research Laboratory and Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign, supported by the US Department of Energy, Division of Materials Sciences under Award No. DE-FG02-07ER46471 (JAR) and DEFG02-07ER46453 (JAR).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)