Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

Tae Il Kim, Yei Hwan Jung, Hyun Joong Chung, Ki Jun Yu, Numair Ahmed, Christopher J. Corcoran, Jae Suk Park, Sung Hun Jin, John A. Rogers

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Deterministic assembly of ultrathin metal oxide-semiconductor field-effect transistors released from the surfaces of bulk wafers with (111) orientation provides a route to high quality electronics on nearly any type of substrate. Device parameters and bias stability characteristics from transistors on sheets of plastic confirm the effectiveness of the approach and the critical roles of thermally grown layers of silicon dioxide for the gate dielectrics and passivation layers. Systematic studies of the anisotropic etching processes used to release the devices illustrate capabilities into the sub-micron thickness regime, with beneficial effects on the bending stiffness and degree of bendability.

Original languageEnglish
Article number182104
JournalApplied Physics Letters
Volume102
Issue number18
DOIs
Publication statusPublished - 2013 May 6

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, T. I., Hwan Jung, Y., Chung, H. J., Jun Yu, K., Ahmed, N., Corcoran, C. J., Suk Park, J., Hun Jin, S., & Rogers, J. A. (2013). Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers. Applied Physics Letters, 102(18), [182104]. https://doi.org/10.1063/1.4804139