Abstract
We analyzed the feasibility of using a UV imprinting process to integrate a microlens array onto an image sensor. A simulated wafer-scale image sensor chip array was fabricated for the implementation. A microlens array with a side length of 4.63μm, a sag height of 1.416μm, and a residual-layer thickness of 1.15μm was integrated onto the simulated image sensor. The standard deviations of the sag height and the residuallayer thickness were less than 0.038μm and less than 0.164μm, respectively, in whole-wafer-scale samples. The measured beam spot size (FWHM) at the imaging plane was 1.19μm, with a uniform intensity distribution and pitch in the array.
| Original language | English |
|---|---|
| Pages (from-to) | 2710-2712 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 31 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2006 Sep 15 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
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Development of an ultraviolet imprinting process for integrating a microlens array onto an image sensor. / Kim, Seok Min; Kim, Hongmin; Kang, Shinill.
In: Optics Letters, Vol. 31, No. 18, 15.09.2006, p. 2710-2712.Research output: Contribution to journal › Article
TY - JOUR
T1 - Development of an ultraviolet imprinting process for integrating a microlens array onto an image sensor
AU - Kim, Seok Min
AU - Kim, Hongmin
AU - Kang, Shinill
PY - 2006/9/15
Y1 - 2006/9/15
N2 - We analyzed the feasibility of using a UV imprinting process to integrate a microlens array onto an image sensor. A simulated wafer-scale image sensor chip array was fabricated for the implementation. A microlens array with a side length of 4.63μm, a sag height of 1.416μm, and a residual-layer thickness of 1.15μm was integrated onto the simulated image sensor. The standard deviations of the sag height and the residuallayer thickness were less than 0.038μm and less than 0.164μm, respectively, in whole-wafer-scale samples. The measured beam spot size (FWHM) at the imaging plane was 1.19μm, with a uniform intensity distribution and pitch in the array.
AB - We analyzed the feasibility of using a UV imprinting process to integrate a microlens array onto an image sensor. A simulated wafer-scale image sensor chip array was fabricated for the implementation. A microlens array with a side length of 4.63μm, a sag height of 1.416μm, and a residual-layer thickness of 1.15μm was integrated onto the simulated image sensor. The standard deviations of the sag height and the residuallayer thickness were less than 0.038μm and less than 0.164μm, respectively, in whole-wafer-scale samples. The measured beam spot size (FWHM) at the imaging plane was 1.19μm, with a uniform intensity distribution and pitch in the array.
UR - http://www.scopus.com/inward/record.url?scp=33749598309&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749598309&partnerID=8YFLogxK
U2 - 10.1364/OL.31.002710
DO - 10.1364/OL.31.002710
M3 - Article
C2 - 16936866
AN - SCOPUS:33749598309
VL - 31
SP - 2710
EP - 2712
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 18
ER -