Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

Deok Sin Kil, Kwon Hong, Kee Jeung Lee, Joosung Kim, Han Sang Song, Ki Seon Park, Jae Sung Roh, Hyunchul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO 2 and Al 2 O 3 . TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of IfA/cell.

Original languageEnglish
Pages (from-to)126-127
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2004 Oct 1
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 152004 Jun 17

Fingerprint

Dynamic random access storage
Leakage currents
Capacitors
Atomic layer deposition
Laminates
Thermodynamic stability
Degradation
Thin films

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kil, Deok Sin ; Hong, Kwon ; Lee, Kee Jeung ; Kim, Joosung ; Song, Han Sang ; Park, Ki Seon ; Roh, Jae Sung ; Sohn, Hyunchul ; Kim, Jin Woong ; Park, Sung Wook. / Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs. In: Digest of Technical Papers - Symposium on VLSI Technology. 2004 ; pp. 126-127.
@article{2d11cf3003784db7b29bc11a60d555b9,
title = "Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs",
abstract = "TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO 2 and Al 2 O 3 . TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11{\AA} and low leakage of IfA/cell.",
author = "Kil, {Deok Sin} and Kwon Hong and Lee, {Kee Jeung} and Joosung Kim and Song, {Han Sang} and Park, {Ki Seon} and Roh, {Jae Sung} and Hyunchul Sohn and Kim, {Jin Woong} and Park, {Sung Wook}",
year = "2004",
month = "10",
day = "1",
language = "English",
pages = "126--127",
journal = "Digest of Technical Papers - Symposium on VLSI Technology",
issn = "0743-1562",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs. / Kil, Deok Sin; Hong, Kwon; Lee, Kee Jeung; Kim, Joosung; Song, Han Sang; Park, Ki Seon; Roh, Jae Sung; Sohn, Hyunchul; Kim, Jin Woong; Park, Sung Wook.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.10.2004, p. 126-127.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

AU - Kil, Deok Sin

AU - Hong, Kwon

AU - Lee, Kee Jeung

AU - Kim, Joosung

AU - Song, Han Sang

AU - Park, Ki Seon

AU - Roh, Jae Sung

AU - Sohn, Hyunchul

AU - Kim, Jin Woong

AU - Park, Sung Wook

PY - 2004/10/1

Y1 - 2004/10/1

N2 - TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO 2 and Al 2 O 3 . TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of IfA/cell.

AB - TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO 2 and Al 2 O 3 . TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of IfA/cell.

UR - http://www.scopus.com/inward/record.url?scp=4544231566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544231566&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:4544231566

SP - 126

EP - 127

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

ER -