Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

Deok Sin Kil, Kwon Hong, Kee Jeung Lee, Joosung Kim, Han Sang Song, Ki Seon Park, Jae Sung Roh, Hyunchul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO 2 and Al 2 O 3 . TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of IfA/cell.

Original languageEnglish
Pages (from-to)126-127
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2004 Oct 1
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 152004 Jun 17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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