@inproceedings{87694cb30b8a4d12b7805e37bca084ab,
title = "Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics",
abstract = "New ZrO2/Al2O3/ZrO2(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al2O3. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3{\AA} and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.",
author = "Kil, {Deok Sin} and Song, {Han Sang} and Lee, {Kee Jeung} and Kwon Hong and Kim, {Jin Hyock} and Park, {Ki Seon} and Yeom, {Seung Jin} and Roh, {Jae Sung} and Kwak, {Noh Jung} and Sohn, {Hyun Chul} and Kim, {Jin Woong} and Park, {Sung Wook}",
year = "2006",
language = "English",
isbn = "1424400058",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "38--39",
booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",
note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",
}