Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics

Deok Sin Kil; Han Sang Song; Kee Jeung Lee; Kwon Hong; Jin Hyock Kim; Ki Seon Park; Seung Jin Yeom; Jae Sung Roh; Noh Jung Kwak; Hyun Chul Sohn; Jin Woong Kim; Sung Wook Park

Development of new TiN/ZrO₂/Al₂O₃/ZrO ₂/TiN capacitors extendable to 45nm generation DRAMs replacing HfO₂ based dielectrics

Deok Sin Kil, Han Sang Song, Kee Jeung Lee, Kwon Hong, Jin Hyock Kim, Ki Seon Park, Seung Jin Yeom, Jae Sung Roh, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

61 Citations (Scopus)

Abstract

New ZrO₂/Al₂O₃/ZrO₂(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO₂ and amorphous Al₂O₃. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3Å and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.

Original language	English
Title of host publication	2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages	38-39
Number of pages	2
Publication status	Published - 2006
Event	2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: 2006 Jun 13 → 2006 Jun 15

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2006 Symposium on VLSI Technology, VLSIT
Country	United States
City	Honolulu, HI
Period	06/6/13 → 06/6/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics'. Together they form a unique fingerprint.

Cite this

Kil, D. S., Song, H. S., Lee, K. J., Hong, K., Kim, J. H., Park, K. S., Yeom, S. J., Roh, J. S., Kwak, N. J., Sohn, H. C., Kim, J. W., & Park, S. W. (2006). Development of new TiN/ZrO₂/Al₂O₃/ZrO ₂/TiN capacitors extendable to 45nm generation DRAMs replacing HfO₂ based dielectrics. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 38-39). [1705205] (Digest of Technical Papers - Symposium on VLSI Technology).

Kil, Deok Sin ; Song, Han Sang ; Lee, Kee Jeung ; Hong, Kwon ; Kim, Jin Hyock ; Park, Ki Seon ; Yeom, Seung Jin ; Roh, Jae Sung ; Kwak, Noh Jung ; Sohn, Hyun Chul ; Kim, Jin Woong ; Park, Sung Wook. / Development of new TiN/ZrO₂/Al₂O₃/ZrO ₂/TiN capacitors extendable to 45nm generation DRAMs replacing HfO₂ based dielectrics. 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. pp. 38-39 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{87694cb30b8a4d12b7805e37bca084ab,

title = "Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics",

abstract = "New ZrO2/Al2O3/ZrO2(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al2O3. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3{\AA} and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.",

author = "Kil, {Deok Sin} and Song, {Han Sang} and Lee, {Kee Jeung} and Kwon Hong and Kim, {Jin Hyock} and Park, {Ki Seon} and Yeom, {Seung Jin} and Roh, {Jae Sung} and Kwak, {Noh Jung} and Sohn, {Hyun Chul} and Kim, {Jin Woong} and Park, {Sung Wook}",

year = "2006",

language = "English",

isbn = "1424400058",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "38--39",

booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",

note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",

}

Kil, DS, Song, HS, Lee, KJ, Hong, K, Kim, JH, Park, KS, Yeom, SJ, Roh, JS, Kwak, NJ, Sohn, HC, Kim, JW & Park, SW 2006, Development of new TiN/ZrO₂/Al₂O₃/ZrO ₂/TiN capacitors extendable to 45nm generation DRAMs replacing HfO₂ based dielectrics. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705205, Digest of Technical Papers - Symposium on VLSI Technology, pp. 38-39, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 06/6/13.

Development of new TiN/ZrO₂/Al₂O₃/ZrO ₂/TiN capacitors extendable to 45nm generation DRAMs replacing HfO₂ based dielectrics. / Kil, Deok Sin; Song, Han Sang; Lee, Kee Jeung; Hong, Kwon; Kim, Jin Hyock; Park, Ki Seon; Yeom, Seung Jin; Roh, Jae Sung; Kwak, Noh Jung; Sohn, Hyun Chul; Kim, Jin Woong; Park, Sung Wook.

2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 38-39 1705205 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics

AU - Kil, Deok Sin

AU - Song, Han Sang

AU - Lee, Kee Jeung

AU - Hong, Kwon

AU - Kim, Jin Hyock

AU - Park, Ki Seon

AU - Yeom, Seung Jin

AU - Roh, Jae Sung

AU - Kwak, Noh Jung

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

AU - Park, Sung Wook

PY - 2006

Y1 - 2006

N2 - New ZrO2/Al2O3/ZrO2(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al2O3. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3Å and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.

AB - New ZrO2/Al2O3/ZrO2(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al2O3. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3Å and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.

UR - http://www.scopus.com/inward/record.url?scp=41149148206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149148206&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:41149148206

SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 38

EP - 39

BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

T2 - 2006 Symposium on VLSI Technology, VLSIT

Y2 - 13 June 2006 through 15 June 2006

ER -