Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics

Deok Sin Kil, Han Sang Song, Kee Jeung Lee, Kwon Hong, Jin Hyock Kim, Ki Seon Park, Seung Jin Yeom, Jae Sung Roh, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

60 Citations (Scopus)

Abstract

New ZrO2/Al2O3/ZrO2(ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al2O3. Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3Å and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages38-39
Number of pages2
Publication statusPublished - 2006
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Development of new TiN/ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/ZrO <sub>2</sub>/TiN capacitors extendable to 45nm generation DRAMs replacing HfO<sub>2</sub> based dielectrics'. Together they form a unique fingerprint.

Cite this