Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at 190 To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then α,ω- dihexylquaterthiophene was drop-cast between source and drain electrode. I-V character was measured to investigate an electrical performance of the fabricated transistor.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006 Dec 1|
|Event||IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of|
Duration: 2006 Aug 22 → 2006 Aug 25
All Science Journal Classification (ASJC) codes