Development of organic-inorganic hybrid dielectric for organic thin film transistors

Sunho Jeong, Dongjo Kim, Sul Lee, Bong Kyun Park, Joo Ho Moon

Research output: Contribution to journalConference article

Abstract

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at 190 To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then α,ω- dihexylquaterthiophene was drop-cast between source and drain electrode. I-V character was measured to investigate an electrical performance of the fabricated transistor.

Original languageEnglish
Pages (from-to)1115-1118
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006 Dec 1
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

Fingerprint

Thin film transistors
Electrodes
Gate dielectrics
Hybrid materials
Leakage currents
Sol-gel process
Transistors
Electric properties
Capacitance
Heat treatment
Silicon
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at 190 To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then α,ω- dihexylquaterthiophene was drop-cast between source and drain electrode. I-V character was measured to investigate an electrical performance of the fabricated transistor.",
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Development of organic-inorganic hybrid dielectric for organic thin film transistors. / Jeong, Sunho; Kim, Dongjo; Lee, Sul; Park, Bong Kyun; Moon, Joo Ho.

In: Proceedings of International Meeting on Information Display, Vol. 2006, 01.12.2006, p. 1115-1118.

Research output: Contribution to journalConference article

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T1 - Development of organic-inorganic hybrid dielectric for organic thin film transistors

AU - Jeong, Sunho

AU - Kim, Dongjo

AU - Lee, Sul

AU - Park, Bong Kyun

AU - Moon, Joo Ho

PY - 2006/12/1

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N2 - Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at 190 To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then α,ω- dihexylquaterthiophene was drop-cast between source and drain electrode. I-V character was measured to investigate an electrical performance of the fabricated transistor.

AB - Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at 190 To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then α,ω- dihexylquaterthiophene was drop-cast between source and drain electrode. I-V character was measured to investigate an electrical performance of the fabricated transistor.

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