Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

Sangwoo Bae, Jae Seob Hwang, Woo Sik Kim, Hyung-Ho Park, Tae Song Kim

Research output: Contribution to journalConference article

Abstract

Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

Original languageEnglish
Pages (from-to)83-91
Number of pages9
JournalIntegrated Ferroelectrics
Volume69
DOIs
Publication statusPublished - 2005 Dec 1
Event16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of
Duration: 2004 Apr 52004 Apr 8

Fingerprint

Ferroelectric films
Lanthanum
lanthanum
Sol-gels
Doping (additives)
gels
lead titanate zirconate
Leakage currents
Ferroelectric materials
leakage
Permittivity
Substitution reactions
Current density
Fatigue of materials
substitutes
permittivity
current density
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant",
abstract = "Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol{\%} La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.",
author = "Sangwoo Bae and Hwang, {Jae Seob} and Kim, {Woo Sik} and Hyung-Ho Park and Kim, {Tae Song}",
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language = "English",
volume = "69",
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Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant. / Bae, Sangwoo; Hwang, Jae Seob; Kim, Woo Sik; Park, Hyung-Ho; Kim, Tae Song.

In: Integrated Ferroelectrics, Vol. 69, 01.12.2005, p. 83-91.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

AU - Bae, Sangwoo

AU - Hwang, Jae Seob

AU - Kim, Woo Sik

AU - Park, Hyung-Ho

AU - Kim, Tae Song

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

AB - Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

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