Device characteristics of amorphous In-Ga-Zn oxide thin-film transistors with varying channel thickness

Min Jung Lee; Su Jeong Lee; Tae Il Lee; Woong Lee; Jae Min Myoung

doi:10.1088/0268-1242/28/12/125014

Device characteristics of amorphous In-Ga-Zn oxide thin-film transistors with varying channel thickness

Min Jung Lee, Su Jeong Lee, Tae Il Lee, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Channel thickness of thin-film transistors (TFTs) having amorphous In-Ga-Zn oxide channels has been optimized based on the device performance characteristics including output characteristics, transfer characteristics, and bias stress stability. The device performance initially improved as the channel thickness increased from 20 to 30 nm, but subsequently deteriorated with further increasing thickness to 40 nm. The 30-nm-channel TFT exhibited threshold voltage close to 0 V, the highest field-effect mobility (μ_FE), highest on/off ratio, and smallest threshold voltage shift under bias stress. The observed channel-thickness-dependent changes in device characteristics are attributed to the collective contribution of interface traps, fixed oxide charges, and mobile charges.

Original language	English
Article number	125014
Journal	Semiconductor Science and Technology
Volume	28
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/28/12/125014
Publication status	Published - 2013 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Device characteristics of amorphous In-Ga-Zn oxide thin-film transistors with varying channel thickness",

abstract = "Channel thickness of thin-film transistors (TFTs) having amorphous In-Ga-Zn oxide channels has been optimized based on the device performance characteristics including output characteristics, transfer characteristics, and bias stress stability. The device performance initially improved as the channel thickness increased from 20 to 30 nm, but subsequently deteriorated with further increasing thickness to 40 nm. The 30-nm-channel TFT exhibited threshold voltage close to 0 V, the highest field-effect mobility (μFE), highest on/off ratio, and smallest threshold voltage shift under bias stress. The observed channel-thickness-dependent changes in device characteristics are attributed to the collective contribution of interface traps, fixed oxide charges, and mobile charges.",

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AU - Lee, Min Jung

AU - Lee, Su Jeong

AU - Lee, Tae Il

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2013/12

Y1 - 2013/12

N2 - Channel thickness of thin-film transistors (TFTs) having amorphous In-Ga-Zn oxide channels has been optimized based on the device performance characteristics including output characteristics, transfer characteristics, and bias stress stability. The device performance initially improved as the channel thickness increased from 20 to 30 nm, but subsequently deteriorated with further increasing thickness to 40 nm. The 30-nm-channel TFT exhibited threshold voltage close to 0 V, the highest field-effect mobility (μFE), highest on/off ratio, and smallest threshold voltage shift under bias stress. The observed channel-thickness-dependent changes in device characteristics are attributed to the collective contribution of interface traps, fixed oxide charges, and mobile charges.

AB - Channel thickness of thin-film transistors (TFTs) having amorphous In-Ga-Zn oxide channels has been optimized based on the device performance characteristics including output characteristics, transfer characteristics, and bias stress stability. The device performance initially improved as the channel thickness increased from 20 to 30 nm, but subsequently deteriorated with further increasing thickness to 40 nm. The 30-nm-channel TFT exhibited threshold voltage close to 0 V, the highest field-effect mobility (μFE), highest on/off ratio, and smallest threshold voltage shift under bias stress. The observed channel-thickness-dependent changes in device characteristics are attributed to the collective contribution of interface traps, fixed oxide charges, and mobile charges.

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Device characteristics of amorphous In-Ga-Zn oxide thin-film transistors with varying channel thickness

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