The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 2012 Dec|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry