Device characteristics of InSnO thin-film transistors with a modulated channel

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

Abstract

The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

Original languageEnglish
Article number125006
JournalSemiconductor Science and Technology
Volume27
Issue number12
DOIs
Publication statusPublished - 2012 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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