Device characteristics of InSnO thin-film transistors with a modulated channel

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticle

Abstract

The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

Original languageEnglish
Article number125006
JournalSemiconductor Science and Technology
Volume27
Issue number12
DOIs
Publication statusPublished - 2012 Dec 1

Fingerprint

Thin film transistors
Carrier concentration
transistors
thin films
Electrodes
insertion
insulators
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{c75239e686ab48108efd1b660f339b84,
title = "Device characteristics of InSnO thin-film transistors with a modulated channel",
abstract = "The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.",
author = "Kim, {Chang Eun} and Ilgu Yun",
year = "2012",
month = "12",
day = "1",
doi = "10.1088/0268-1242/27/12/125006",
language = "English",
volume = "27",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "12",

}

Device characteristics of InSnO thin-film transistors with a modulated channel. / Kim, Chang Eun; Yun, Ilgu.

In: Semiconductor Science and Technology, Vol. 27, No. 12, 125006, 01.12.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Device characteristics of InSnO thin-film transistors with a modulated channel

AU - Kim, Chang Eun

AU - Yun, Ilgu

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

AB - The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

UR - http://www.scopus.com/inward/record.url?scp=84870278233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870278233&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/27/12/125006

DO - 10.1088/0268-1242/27/12/125006

M3 - Article

AN - SCOPUS:84870278233

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

M1 - 125006

ER -