The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry