Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalThin Solid Films
Volume537
DOIs
Publication statusPublished - 2013 Jun 30

Fingerprint

Thin film transistors
transistors
thin films
Threshold voltage
Carrier concentration
Modulation
threshold voltage
Electrodes
insertion
insulators
modulation
electrodes
augmentation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{69f5f153a31641bfa75e489e17d4ad06,
title = "Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures",
abstract = "The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.",
author = "Kim, {Chang Eun} and Ilgu Yun",
year = "2013",
month = "6",
day = "30",
doi = "10.1016/j.tsf.2013.04.030",
language = "English",
volume = "537",
pages = "275--278",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures. / Kim, Chang Eun; Yun, Ilgu.

In: Thin Solid Films, Vol. 537, 30.06.2013, p. 275-278.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

AU - Kim, Chang Eun

AU - Yun, Ilgu

PY - 2013/6/30

Y1 - 2013/6/30

N2 - The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

AB - The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

UR - http://www.scopus.com/inward/record.url?scp=84878276170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878276170&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.04.030

DO - 10.1016/j.tsf.2013.04.030

M3 - Article

AN - SCOPUS:84878276170

VL - 537

SP - 275

EP - 278

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -