Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions

H. S. Bae, Seongil Im, J. H. Song

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the fabrication of ultraviolet (UV)-detecting ZnO-based thin-film transistors (TFTs) and their isolation by energetic B ions. After deposition on a SiO2/p+-Si substrate at 300°C by radio frequency (rf) sputtering, the ZnO layer was patterned with Al source/drain (S/D) contacts and a SiOx window. Then energetic B ions with 30 and 55 keV were implanted onto the deposited structures for device isolation. Among the three samples of unimplanted, 30 keV-, and 55 keV-implanted devices, the 55 keV-implanted one displayed the least gate current leakage (∼100 pA). The ZnO-TFT isolated with 55 keV B also showed a field mobility of 0.7 cm 2/V s and on/off current ratio of more than ∼104, respectively. Under 364 nm UV light of 0.2 mW/cm2 and at zero volts of gate bias, the device exhibited a photo-to-dark current ratio of ∼5 × 103 with a temporal response of about 10 ms.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume153
Issue number9
DOIs
Publication statusPublished - 2006 Aug 1

Fingerprint

Thin film transistors
isolation
Transistors
transistors
Ions
Dark currents
Leakage currents
Sputtering
ions
thin films
dark current
Fabrication
ultraviolet radiation
radio frequencies
leakage
Substrates
sputtering
fabrication
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "We report on the fabrication of ultraviolet (UV)-detecting ZnO-based thin-film transistors (TFTs) and their isolation by energetic B ions. After deposition on a SiO2/p+-Si substrate at 300°C by radio frequency (rf) sputtering, the ZnO layer was patterned with Al source/drain (S/D) contacts and a SiOx window. Then energetic B ions with 30 and 55 keV were implanted onto the deposited structures for device isolation. Among the three samples of unimplanted, 30 keV-, and 55 keV-implanted devices, the 55 keV-implanted one displayed the least gate current leakage (∼100 pA). The ZnO-TFT isolated with 55 keV B also showed a field mobility of 0.7 cm 2/V s and on/off current ratio of more than ∼104, respectively. Under 364 nm UV light of 0.2 mW/cm2 and at zero volts of gate bias, the device exhibited a photo-to-dark current ratio of ∼5 × 103 with a temporal response of about 10 ms.",
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Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions. / Bae, H. S.; Im, Seongil; Song, J. H.

In: Journal of the Electrochemical Society, Vol. 153, No. 9, 01.08.2006.

Research output: Contribution to journalArticle

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AB - We report on the fabrication of ultraviolet (UV)-detecting ZnO-based thin-film transistors (TFTs) and their isolation by energetic B ions. After deposition on a SiO2/p+-Si substrate at 300°C by radio frequency (rf) sputtering, the ZnO layer was patterned with Al source/drain (S/D) contacts and a SiOx window. Then energetic B ions with 30 and 55 keV were implanted onto the deposited structures for device isolation. Among the three samples of unimplanted, 30 keV-, and 55 keV-implanted devices, the 55 keV-implanted one displayed the least gate current leakage (∼100 pA). The ZnO-TFT isolated with 55 keV B also showed a field mobility of 0.7 cm 2/V s and on/off current ratio of more than ∼104, respectively. Under 364 nm UV light of 0.2 mW/cm2 and at zero volts of gate bias, the device exhibited a photo-to-dark current ratio of ∼5 × 103 with a temporal response of about 10 ms.

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