Devitrification and Delayed Crazing of SiO2 on Single‐Crystal Silicon and Chemically Vapor‐Deposited Silicon Nitride

Doo Jin Choi, William D. Scott

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor‐deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order of magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long‐term applications.

Original languageEnglish
Pages (from-to)C‐269-C‐272
JournalJournal of the American Ceramic Society
Volume70
Issue number10
DOIs
Publication statusPublished - 1987 Jan 1

Fingerprint

Crazing
Silicon
Silicon nitride
Crystallization
Silicon Dioxide
Aluminum Oxide
Steam
Protective coatings
Crystal growth
Water vapor
Furnaces
Alumina
Silica
Impurities
Thin films
Crystals
silicon nitride

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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Devitrification and Delayed Crazing of SiO2 on Single‐Crystal Silicon and Chemically Vapor‐Deposited Silicon Nitride. / Choi, Doo Jin; Scott, William D.

In: Journal of the American Ceramic Society, Vol. 70, No. 10, 01.01.1987, p. C‐269-C‐272.

Research output: Contribution to journalArticle

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