Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100)

M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, H. J. Choi, S. W. Nam, D. H. Ko, J. H. Lee, N. I. Lee, K. Fujihara

Research output: Contribution to journalArticle

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Abstract

The structural characteristics and the chemical state of a HfO 2-Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and x-ray photoelectron spectroscopy. The structural stability is significantly enhanced up to 870°C and so is able to sustain its amorphous and laminate structure. However, the laminate structure is drastically broken at the annealing temperature of 920°C and the crystallization is locally generated. In particular, the formation of the interfacial layer during the postannealing treatment is effectively suppressed in the nanolaminated structure. The dielectric constant of the nanolaminate structure calculated from the accumulation capacitance increases from ∼10 to ∼17 as the annealing temperature increases. This change is closely related to the degree of the mixture composed by Al2O3 and HfO2.

Original languageEnglish
Pages (from-to)1071-1073
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number6
DOIs
Publication statusPublished - 2002 Aug 5

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laminates
annealing
structural stability
x ray spectroscopy
temperature
x ray diffraction
capacitance
photoelectron spectroscopy
crystallization
permittivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M. H., Roh, Y. S., Whang, C. N., Jeong, K., Choi, H. J., Nam, S. W., ... Fujihara, K. (2002). Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100). Applied Physics Letters, 81(6), 1071-1073. https://doi.org/10.1063/1.1499223
Cho, M. H. ; Roh, Y. S. ; Whang, C. N. ; Jeong, K. ; Choi, H. J. ; Nam, S. W. ; Ko, D. H. ; Lee, J. H. ; Lee, N. I. ; Fujihara, K. / Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100). In: Applied Physics Letters. 2002 ; Vol. 81, No. 6. pp. 1071-1073.
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Cho, MH, Roh, YS, Whang, CN, Jeong, K, Choi, HJ, Nam, SW, Ko, DH, Lee, JH, Lee, NI & Fujihara, K 2002, 'Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100)', Applied Physics Letters, vol. 81, no. 6, pp. 1071-1073. https://doi.org/10.1063/1.1499223

Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100). / Cho, M. H.; Roh, Y. S.; Whang, C. N.; Jeong, K.; Choi, H. J.; Nam, S. W.; Ko, D. H.; Lee, J. H.; Lee, N. I.; Fujihara, K.

In: Applied Physics Letters, Vol. 81, No. 6, 05.08.2002, p. 1071-1073.

Research output: Contribution to journalArticle

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AU - Cho, M. H.

AU - Roh, Y. S.

AU - Whang, C. N.

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AU - Choi, H. J.

AU - Nam, S. W.

AU - Ko, D. H.

AU - Lee, J. H.

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AU - Fujihara, K.

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