Dielectric properties of the BaTiO3-AlN-additive system

Yong Soo Cho, Dong Joo Shin, In June Kim, Hyung Sub Lee, Dong Suck Jeong

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Abstract

The mixed system of BaTiO3 and AlN has been investigated in terms of dielectric properties and microstructure. Two different types of additives, bismuth oxide and bismuth borosilicate glass, were used to lower sintering temperature. First, the addition of a fixed content (3 wt.%) of Bi2O3 provided densification at 1200°C where monotonous decreases of dielectric constant were found with increasing the content of AlN. On the other hand, the bismuth borosilicate glass was effectively used to decrease firing temperature to 850°C, which is suitable for thick film capacitor applications. A practical demonstration of thick film capacitors using a Ag electrode on a 96% alumina substrate indicated that the optimum composition of 76BaTiO3-20AlN-4glass may be adequate for generating k of 79.4 and tan δ of 0.014 at 1 MHz as a result of the low temperature firing of 850°C in air atmosphere.

Original languageEnglish
Pages (from-to)461-465
Number of pages5
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering

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