Nanowire devices with back-gated structure were fabricated by dielectrophoresis-based assembly of GaN nanowires. GaN nanowires were aligned at the edge of the Ti/Au electrode patterns by applying electric fields. The results reveal that the assembly of the nanowires is affected by the electrode voltage and the size of the electrode patterns. Devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The on/off ratio, electron carrier concentration, and electron mobility were ∼ 103, ∼ 1018 cm- 3, and 52.1 cm2/V s, respectively. The nanowire devices suspended over the electrodes were applied to ultraviolet sensors, and a substantial increase of conductance under UV light with wavelengths of 365 and 254 nm was observed. Moreover, fast response and recovery time were observed.
Bibliographical noteFunding Information:
This work was supported by Samsung Electronics (grant No 2007-8-0872). This work was also supported by the secondary stage of Brain Korea 21 Project in 2007.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry