Dielectrophoretic assembly of GaN nanowires for UV sensor applications

Jae Woong Lee; Kyeong Ju Moon; Moon Ho Ham; Jae Min Myoung

doi:10.1016/j.ssc.2008.08.022

Dielectrophoretic assembly of GaN nanowires for UV sensor applications

Jae Woong Lee, Kyeong Ju Moon, Moon Ho Ham, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Nanowire devices with back-gated structure were fabricated by dielectrophoresis-based assembly of GaN nanowires. GaN nanowires were aligned at the edge of the Ti/Au electrode patterns by applying electric fields. The results reveal that the assembly of the nanowires is affected by the electrode voltage and the size of the electrode patterns. Devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The on/off ratio, electron carrier concentration, and electron mobility were ∼ 10³, ∼ 10¹⁸ cm^{- 3}, and 52.1 cm²/V s, respectively. The nanowire devices suspended over the electrodes were applied to ultraviolet sensors, and a substantial increase of conductance under UV light with wavelengths of 365 and 254 nm was observed. Moreover, fast response and recovery time were observed.

Original language	English
Pages (from-to)	194-198
Number of pages	5
Journal	Solid State Communications
Volume	148
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ssc.2008.08.022
Publication status	Published - 2008 Nov

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics (grant No 2007-8-0872). This work was also supported by the secondary stage of Brain Korea 21 Project in 2007.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2008.08.022

Cite this

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title = "Dielectrophoretic assembly of GaN nanowires for UV sensor applications",

abstract = "Nanowire devices with back-gated structure were fabricated by dielectrophoresis-based assembly of GaN nanowires. GaN nanowires were aligned at the edge of the Ti/Au electrode patterns by applying electric fields. The results reveal that the assembly of the nanowires is affected by the electrode voltage and the size of the electrode patterns. Devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The on/off ratio, electron carrier concentration, and electron mobility were ∼ 103, ∼ 1018 cm- 3, and 52.1 cm2/V s, respectively. The nanowire devices suspended over the electrodes were applied to ultraviolet sensors, and a substantial increase of conductance under UV light with wavelengths of 365 and 254 nm was observed. Moreover, fast response and recovery time were observed.",

author = "Lee, {Jae Woong} and Moon, {Kyeong Ju} and Ham, {Moon Ho} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by Samsung Electronics (grant No 2007-8-0872). This work was also supported by the secondary stage of Brain Korea 21 Project in 2007.",

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doi = "10.1016/j.ssc.2008.08.022",

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volume = "148",

pages = "194--198",

journal = "Solid State Communications",

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T1 - Dielectrophoretic assembly of GaN nanowires for UV sensor applications

AU - Lee, Jae Woong

AU - Moon, Kyeong Ju

AU - Ham, Moon Ho

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by Samsung Electronics (grant No 2007-8-0872). This work was also supported by the secondary stage of Brain Korea 21 Project in 2007.

PY - 2008/11

Y1 - 2008/11

N2 - Nanowire devices with back-gated structure were fabricated by dielectrophoresis-based assembly of GaN nanowires. GaN nanowires were aligned at the edge of the Ti/Au electrode patterns by applying electric fields. The results reveal that the assembly of the nanowires is affected by the electrode voltage and the size of the electrode patterns. Devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The on/off ratio, electron carrier concentration, and electron mobility were ∼ 103, ∼ 1018 cm- 3, and 52.1 cm2/V s, respectively. The nanowire devices suspended over the electrodes were applied to ultraviolet sensors, and a substantial increase of conductance under UV light with wavelengths of 365 and 254 nm was observed. Moreover, fast response and recovery time were observed.

AB - Nanowire devices with back-gated structure were fabricated by dielectrophoresis-based assembly of GaN nanowires. GaN nanowires were aligned at the edge of the Ti/Au electrode patterns by applying electric fields. The results reveal that the assembly of the nanowires is affected by the electrode voltage and the size of the electrode patterns. Devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The on/off ratio, electron carrier concentration, and electron mobility were ∼ 103, ∼ 1018 cm- 3, and 52.1 cm2/V s, respectively. The nanowire devices suspended over the electrodes were applied to ultraviolet sensors, and a substantial increase of conductance under UV light with wavelengths of 365 and 254 nm was observed. Moreover, fast response and recovery time were observed.

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JO - Solid State Communications

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Dielectrophoretic assembly of GaN nanowires for UV sensor applications

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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