The electrical properties for the new RuTiN barrier material were investigated and compared with those for the TiN barrier. In case of the TiN barrier in the sputtered-(Ba,Sr)TiO3 simple stack-type structure, the TiN film was partially oxidized in the as-deposited state and was almost completely oxidized at 550 °C, leading to a degradation of the capacitance. In contrast, the new RuTiN barrier was not oxidized up to 600 °C, and exhibited an improved capacitance of >30 fF/cell, although the leakage current is very high (∼10-9 A/cell) due to low work function (4.43 eV). Correspondingly, the diffusion barrier performance of new RuTiN film, as an oxygen diffusion barrier for high-density volatile capacitor, is better than that of the TiN barrier.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys