Diffusion barrier performance of novel RuTiN material for high-density volatile memory capacitor

D. S. Yoon, J. S. Roh, Sung Man Lee, Hong Koo Baik

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1 Citation (Scopus)


The electrical properties for the new RuTiN barrier material were investigated and compared with those for the TiN barrier. In case of the TiN barrier in the sputtered-(Ba,Sr)TiO3 simple stack-type structure, the TiN film was partially oxidized in the as-deposited state and was almost completely oxidized at 550 °C, leading to a degradation of the capacitance. In contrast, the new RuTiN barrier was not oxidized up to 600 °C, and exhibited an improved capacitance of >30 fF/cell, although the leakage current is very high (∼10-9 A/cell) due to low work function (4.43 eV). Correspondingly, the diffusion barrier performance of new RuTiN film, as an oxygen diffusion barrier for high-density volatile capacitor, is better than that of the TiN barrier.

Original languageEnglish
Pages (from-to)2531-2538
Number of pages8
JournalActa Materialia
Issue number9
Publication statusPublished - 2003 May 23


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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