Diffusion barriers between Al and Cu for the Cu interconnect of memory devices

Soo Hyun Kim, Sung Soo Yim, Do Joong Lee, Ki Su Kim, Hyun Mi Kim, Ki Bum Kim, Hyunchul Sohn

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report a comparative study on the diffusion barrier performance of transition metal nitride thin films, including TiNx, TaNx, and WNx, between Al and Cu deposited by ionized physical vapor deposition (IPVD) or atomic layer deposition (ALD), which is particularly important for the integration of the Cu interconnect into memory devices such as dynamic random access memory and NAND Flash. Without a suitable diffusion barrier, various kinds of Al-Cu intermetallic compounds were formed, even after annealing at 200°C for 30 min. Sheet resistance measurements, X-ray diffractometry, and cross-sectional view transmission electron microscopy analysis combined with energy-dispersive spectroscopy consistently showed that the insertion of a 10-nm-thick IPVD- TiNx or IPVD- TaNx layer between the two layers retarded the interdiffusion of Al and Cu during the annealing at 400 or 450°C, respectively, for 30 min in a high vacuum (<5× 10-5 Torr). Noticeably, ALD- WNx prepared using a sequential supply of B2 H6, WF6, and NH3, could effectively prevent the interdiffusion of Al and Cu and the formation of Al-Cu intermetallic compounds up to an annealing temperature of 550°C for 30 min.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number5
DOIs
Publication statusPublished - 2008 Mar 24

Fingerprint

Diffusion barriers
Physical vapor deposition
Atomic layer deposition
vapor deposition
Annealing
atomic layer epitaxy
Data storage equipment
annealing
Intermetallics
intermetallics
metal nitrides
Sheet resistance
random access memory
high vacuum
Nitrides
X ray diffraction analysis
Transition metals
flash
Energy dispersive spectroscopy
insertion

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Soo Hyun ; Yim, Sung Soo ; Lee, Do Joong ; Kim, Ki Su ; Kim, Hyun Mi ; Kim, Ki Bum ; Sohn, Hyunchul. / Diffusion barriers between Al and Cu for the Cu interconnect of memory devices. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 5.
@article{acb2344b24d5439e85d681880b190d62,
title = "Diffusion barriers between Al and Cu for the Cu interconnect of memory devices",
abstract = "We report a comparative study on the diffusion barrier performance of transition metal nitride thin films, including TiNx, TaNx, and WNx, between Al and Cu deposited by ionized physical vapor deposition (IPVD) or atomic layer deposition (ALD), which is particularly important for the integration of the Cu interconnect into memory devices such as dynamic random access memory and NAND Flash. Without a suitable diffusion barrier, various kinds of Al-Cu intermetallic compounds were formed, even after annealing at 200°C for 30 min. Sheet resistance measurements, X-ray diffractometry, and cross-sectional view transmission electron microscopy analysis combined with energy-dispersive spectroscopy consistently showed that the insertion of a 10-nm-thick IPVD- TiNx or IPVD- TaNx layer between the two layers retarded the interdiffusion of Al and Cu during the annealing at 400 or 450°C, respectively, for 30 min in a high vacuum (<5× 10-5 Torr). Noticeably, ALD- WNx prepared using a sequential supply of B2 H6, WF6, and NH3, could effectively prevent the interdiffusion of Al and Cu and the formation of Al-Cu intermetallic compounds up to an annealing temperature of 550°C for 30 min.",
author = "Kim, {Soo Hyun} and Yim, {Sung Soo} and Lee, {Do Joong} and Kim, {Ki Su} and Kim, {Hyun Mi} and Kim, {Ki Bum} and Hyunchul Sohn",
year = "2008",
month = "3",
day = "24",
doi = "10.1149/1.2890092",
language = "English",
volume = "11",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

Diffusion barriers between Al and Cu for the Cu interconnect of memory devices. / Kim, Soo Hyun; Yim, Sung Soo; Lee, Do Joong; Kim, Ki Su; Kim, Hyun Mi; Kim, Ki Bum; Sohn, Hyunchul.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 5, 24.03.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Diffusion barriers between Al and Cu for the Cu interconnect of memory devices

AU - Kim, Soo Hyun

AU - Yim, Sung Soo

AU - Lee, Do Joong

AU - Kim, Ki Su

AU - Kim, Hyun Mi

AU - Kim, Ki Bum

AU - Sohn, Hyunchul

PY - 2008/3/24

Y1 - 2008/3/24

N2 - We report a comparative study on the diffusion barrier performance of transition metal nitride thin films, including TiNx, TaNx, and WNx, between Al and Cu deposited by ionized physical vapor deposition (IPVD) or atomic layer deposition (ALD), which is particularly important for the integration of the Cu interconnect into memory devices such as dynamic random access memory and NAND Flash. Without a suitable diffusion barrier, various kinds of Al-Cu intermetallic compounds were formed, even after annealing at 200°C for 30 min. Sheet resistance measurements, X-ray diffractometry, and cross-sectional view transmission electron microscopy analysis combined with energy-dispersive spectroscopy consistently showed that the insertion of a 10-nm-thick IPVD- TiNx or IPVD- TaNx layer between the two layers retarded the interdiffusion of Al and Cu during the annealing at 400 or 450°C, respectively, for 30 min in a high vacuum (<5× 10-5 Torr). Noticeably, ALD- WNx prepared using a sequential supply of B2 H6, WF6, and NH3, could effectively prevent the interdiffusion of Al and Cu and the formation of Al-Cu intermetallic compounds up to an annealing temperature of 550°C for 30 min.

AB - We report a comparative study on the diffusion barrier performance of transition metal nitride thin films, including TiNx, TaNx, and WNx, between Al and Cu deposited by ionized physical vapor deposition (IPVD) or atomic layer deposition (ALD), which is particularly important for the integration of the Cu interconnect into memory devices such as dynamic random access memory and NAND Flash. Without a suitable diffusion barrier, various kinds of Al-Cu intermetallic compounds were formed, even after annealing at 200°C for 30 min. Sheet resistance measurements, X-ray diffractometry, and cross-sectional view transmission electron microscopy analysis combined with energy-dispersive spectroscopy consistently showed that the insertion of a 10-nm-thick IPVD- TiNx or IPVD- TaNx layer between the two layers retarded the interdiffusion of Al and Cu during the annealing at 400 or 450°C, respectively, for 30 min in a high vacuum (<5× 10-5 Torr). Noticeably, ALD- WNx prepared using a sequential supply of B2 H6, WF6, and NH3, could effectively prevent the interdiffusion of Al and Cu and the formation of Al-Cu intermetallic compounds up to an annealing temperature of 550°C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=40849086399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40849086399&partnerID=8YFLogxK

U2 - 10.1149/1.2890092

DO - 10.1149/1.2890092

M3 - Article

VL - 11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -