Dip-pen lithography of ferroelectric PbTiO3 nanodots

Yeog Son Jong, Young Han Shin, Ryu Sangwoo, Kim Hyungjun, Hyun M. Jang

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

Original languageEnglish
Pages (from-to)14676-14678
Number of pages3
JournalJournal of the American Chemical Society
Volume131
Issue number41
DOIs
Publication statusPublished - 2009 Oct 21

Fingerprint

Nanolithography
Lithography
Ferroelectric materials
Growth
Silicon nitride
Epitaxial growth
Substrates
silicon nitride
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Jong, Yeog Son ; Shin, Young Han ; Sangwoo, Ryu ; Hyungjun, Kim ; Jang, Hyun M. / Dip-pen lithography of ferroelectric PbTiO3 nanodots. In: Journal of the American Chemical Society. 2009 ; Vol. 131, No. 41. pp. 14676-14678.
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Dip-pen lithography of ferroelectric PbTiO3 nanodots. / Jong, Yeog Son; Shin, Young Han; Sangwoo, Ryu; Hyungjun, Kim; Jang, Hyun M.

In: Journal of the American Chemical Society, Vol. 131, No. 41, 21.10.2009, p. 14676-14678.

Research output: Contribution to journalArticle

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AU - Jong, Yeog Son

AU - Shin, Young Han

AU - Sangwoo, Ryu

AU - Hyungjun, Kim

AU - Jang, Hyun M.

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