Dip-pen lithography of ferroelectric PbTiO3 nanodots

Yeog Son Jong; Young Han Shin; Ryu Sangwoo; Kim Hyungjun; Hyun M. Jang

doi:10.1021/ja906871b

Dip-pen lithography of ferroelectric PbTiO₃ nanodots

Yeog Son Jong, Young Han Shin, Ryu Sangwoo, Kim Hyungjun, Hyun M. Jang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO₃ substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

Original language	English
Pages (from-to)	14676-14678
Number of pages	3
Journal	Journal of the American Chemical Society
Volume	131
Issue number	41
DOIs	https://doi.org/10.1021/ja906871b
Publication status	Published - 2009 Oct 21

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja906871b

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abstract = "(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.",

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T1 - Dip-pen lithography of ferroelectric PbTiO3 nanodots

AU - Jong, Yeog Son

AU - Shin, Young Han

AU - Sangwoo, Ryu

AU - Hyungjun, Kim

AU - Jang, Hyun M.

PY - 2009/10/21

Y1 - 2009/10/21

N2 - (Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

AB - (Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

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JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 41

ER -

Dip-pen lithography of ferroelectric PbTiO₃ nanodots

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