(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.
|Number of pages||3|
|Journal||Journal of the American Chemical Society|
|Publication status||Published - 2009 Oct 21|
All Science Journal Classification (ASJC) codes
- Colloid and Surface Chemistry