Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)

Sang Kwon Lee, Han Kyu Seong, Ki Chul Choi, Nam Kyu Cho, Heon-Jin Choi, Eun Kyung Suh, Kee Suk Nahm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages1549-1552
Number of pages4
EditionPART 2
Publication statusPublished - 2006 Dec 1
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

Fingerprint

Field effect transistors
Lithography
Nanowires
nanowires
field effect transistors
lithography
Electric properties
electrical properties
Semiconductor materials
Gallium nitride
gallium nitrides
Carrier mobility
carrier mobility
Silicon wafers
Masks
Chemical vapor deposition
masks
Gases
Modulation
vapor deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, S. K., Seong, H. K., Choi, K. C., Cho, N. K., Choi, H-J., Suh, E. K., & Nahm, K. S. (2006). Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL). In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 1549-1552). (Materials Science Forum; Vol. 527-529, No. PART 2).
Lee, Sang Kwon ; Seong, Han Kyu ; Choi, Ki Chul ; Cho, Nam Kyu ; Choi, Heon-Jin ; Suh, Eun Kyung ; Nahm, Kee Suk. / Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL). Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. pp. 1549-1552 (Materials Science Forum; PART 2).
@inproceedings{4c44b7a8040c4fadb29981a7dfb9a779,
title = "Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)",
abstract = "We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.",
author = "Lee, {Sang Kwon} and Seong, {Han Kyu} and Choi, {Ki Chul} and Cho, {Nam Kyu} and Heon-Jin Choi and Suh, {Eun Kyung} and Nahm, {Kee Suk}",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "9780878494255",
series = "Materials Science Forum",
number = "PART 2",
pages = "1549--1552",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",

}

Lee, SK, Seong, HK, Choi, KC, Cho, NK, Choi, H-J, Suh, EK & Nahm, KS 2006, Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL). in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, Materials Science Forum, no. PART 2, vol. 527-529, pp. 1549-1552, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 05/9/18.

Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL). / Lee, Sang Kwon; Seong, Han Kyu; Choi, Ki Chul; Cho, Nam Kyu; Choi, Heon-Jin; Suh, Eun Kyung; Nahm, Kee Suk.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. p. 1549-1552 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)

AU - Lee, Sang Kwon

AU - Seong, Han Kyu

AU - Choi, Ki Chul

AU - Cho, Nam Kyu

AU - Choi, Heon-Jin

AU - Suh, Eun Kyung

AU - Nahm, Kee Suk

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

AB - We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=33846585724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846585724&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9780878494255

T3 - Materials Science Forum

SP - 1549

EP - 1552

BT - Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005

ER -

Lee SK, Seong HK, Choi KC, Cho NK, Choi H-J, Suh EK et al. Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL). In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. 2006. p. 1549-1552. (Materials Science Forum; PART 2).