@inproceedings{4c44b7a8040c4fadb29981a7dfb9a779,
title = "Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)",
abstract = "We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.",
author = "Lee, {Sang Kwon} and Seong, {Han Kyu} and Choi, {Ki Chul} and Cho, {Nam Kyu} and Choi, {Heon Jin} and Suh, {Eun Kyung} and Nahm, {Kee Suk}",
year = "2006",
doi = "10.4028/0-87849-425-1.1549",
language = "English",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1549--1552",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}