Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)

Sang Kwon Lee, Han Kyu Seong, Ki Chul Choi, Nam Kyu Cho, Heon Jin Choi, Eun Kyung Suh, Kee Suk Nahm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8x8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm 2/V.s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
PublisherTrans Tech Publications Ltd
Pages1549-1552
Number of pages4
EditionPART 2
ISBN (Print)9780878494255
DOIs
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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