Direct electrical characteristics of GaN nanowire Field Effect Transistor (FET) without assistance of E-beam Lithography (EBL)

Engineering

• Nanowire 100%
• Field-Effect Transistor 33%
• Electrical Property of Semiconductor 33%
• Fabrication 16%
• Measurement 16%
• Carrier Mobility 16%
• Nanoscale 16%
• Chemical Vapour Deposition 16%
• Silicon Wafer 16%
• Material Characteristic 16%
• Electrical Device 16%
• Beam Lithography 16%

Physics

• Lithography 33%
• Field Effect Transistors 33%
• Modulation 16%
• Electrical Properties 16%
• Nanoscale 16%
• Semiconductor 16%
• Carrier Mobility 16%
• Vapor Deposition 16%

Material Science

• Carrier Mobility 16%
• Semiconductor Material 16%
• Silicon Wafer 16%
• Gallium Nitride 16%