Direct evidence of n-type doping in organic light-emitting devices: N free Cs doping from CsN 3

Jeihyun Lee; Hyunbok Lee; Pyungeun Jeon; Kwangho Jeong; Tae Gun Kim; Jeong Won Kim; Yeonjin Yi

doi:10.1063/1.4718017

Direct evidence of n-type doping in organic light-emitting devices: N free Cs doping from CsN ₃

Jeihyun Lee, Hyunbok Lee, Pyungeun Jeon, Kwangho Jeong, Tae Gun Kim, Jeong Won Kim, Yeonjin Yi

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Cesium azide (CsN ₃) is confirmed to be decomposed during thermal evaporation. Only Cs could be deposited on tris(8-hydroxyquinolinato)aluminum (Alq ₃) and n-type doping is easily achieved. Organic light-emitting devices with CsN ₃ show highly improved current density-luminance- voltage characteristics compared to the control device without CsN ₃. To understand the origin of the improvements, in situ x-ray and UV photoemission spectroscopy measurements were carried out and a remarkable reduction in electron injection barrier is verified with successive deposition of Al on CsN ₃ on Alq ₃. CsN ₃ has a potential as alternative to doping the electron transport layer by replacing the direct deposition of alkali metals.

Original language	English
Article number	203301
Journal	Applied Physics Letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4718017
Publication status	Published - 2012 May 14

Bibliographical note

Funding Information:
This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea. (Grant No. 2011-0004748).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4718017

Cite this

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title = "Direct evidence of n-type doping in organic light-emitting devices: N free Cs doping from CsN 3",

abstract = "Cesium azide (CsN 3) is confirmed to be decomposed during thermal evaporation. Only Cs could be deposited on tris(8-hydroxyquinolinato)aluminum (Alq 3) and n-type doping is easily achieved. Organic light-emitting devices with CsN 3 show highly improved current density-luminance- voltage characteristics compared to the control device without CsN 3. To understand the origin of the improvements, in situ x-ray and UV photoemission spectroscopy measurements were carried out and a remarkable reduction in electron injection barrier is verified with successive deposition of Al on CsN 3 on Alq 3. CsN 3 has a potential as alternative to doping the electron transport layer by replacing the direct deposition of alkali metals.",

author = "Jeihyun Lee and Hyunbok Lee and Pyungeun Jeon and Kwangho Jeong and {Gun Kim}, Tae and {Won Kim}, Jeong and Yeonjin Yi",

note = "Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea. (Grant No. 2011-0004748). ",

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T1 - Direct evidence of n-type doping in organic light-emitting devices

T2 - N free Cs doping from CsN 3

AU - Lee, Jeihyun

AU - Lee, Hyunbok

AU - Jeon, Pyungeun

AU - Jeong, Kwangho

AU - Gun Kim, Tae

AU - Won Kim, Jeong

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea. (Grant No. 2011-0004748).

PY - 2012/5/14

Y1 - 2012/5/14

N2 - Cesium azide (CsN 3) is confirmed to be decomposed during thermal evaporation. Only Cs could be deposited on tris(8-hydroxyquinolinato)aluminum (Alq 3) and n-type doping is easily achieved. Organic light-emitting devices with CsN 3 show highly improved current density-luminance- voltage characteristics compared to the control device without CsN 3. To understand the origin of the improvements, in situ x-ray and UV photoemission spectroscopy measurements were carried out and a remarkable reduction in electron injection barrier is verified with successive deposition of Al on CsN 3 on Alq 3. CsN 3 has a potential as alternative to doping the electron transport layer by replacing the direct deposition of alkali metals.

AB - Cesium azide (CsN 3) is confirmed to be decomposed during thermal evaporation. Only Cs could be deposited on tris(8-hydroxyquinolinato)aluminum (Alq 3) and n-type doping is easily achieved. Organic light-emitting devices with CsN 3 show highly improved current density-luminance- voltage characteristics compared to the control device without CsN 3. To understand the origin of the improvements, in situ x-ray and UV photoemission spectroscopy measurements were carried out and a remarkable reduction in electron injection barrier is verified with successive deposition of Al on CsN 3 on Alq 3. CsN 3 has a potential as alternative to doping the electron transport layer by replacing the direct deposition of alkali metals.

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