Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages105-106
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Bismuth
Nanowires
Crystalline materials
Stress relaxation
Transport properties
Thermal expansion
Grain boundaries
Wire
Annealing
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ham, J., Shim, W., Kim, D. H., Lee, S., Roh, J., Sohn, S. W., ... Lee, W. (2010). Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 105-106). [5424556] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424556
Ham, Jinhee ; Shim, Wooyoung ; Kim, Do Hyun ; Lee, Seunghyun ; Roh, Jongwook ; Sohn, Sung Woo ; Oh, Kyu Hwan ; Voorhees, Peter W. ; Lee, Wooyoung. / Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 105-106 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
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title = "Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices",
abstract = "We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.",
author = "Jinhee Ham and Wooyoung Shim and Kim, {Do Hyun} and Seunghyun Lee and Jongwook Roh and Sohn, {Sung Woo} and Oh, {Kyu Hwan} and Voorhees, {Peter W.} and Wooyoung Lee",
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Ham, J, Shim, W, Kim, DH, Lee, S, Roh, J, Sohn, SW, Oh, KH, Voorhees, PW & Lee, W 2010, Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424556, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 105-106, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. / Ham, Jinhee; Shim, Wooyoung; Kim, Do Hyun; Lee, Seunghyun; Roh, Jongwook; Sohn, Sung Woo; Oh, Kyu Hwan; Voorhees, Peter W.; Lee, Wooyoung.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106 5424556 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

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N2 - We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

AB - We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

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Ham J, Shim W, Kim DH, Lee S, Roh J, Sohn SW et al. Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106. 5424556. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424556