Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages105-106
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Ham, J., Shim, W., Kim, D. H., Lee, S., Roh, J., Sohn, S. W., Oh, K. H., Voorhees, P. W., & Lee, W. (2010). Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 105-106). [5424556] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424556