Bismuth telluride (Bi2Te3) nanowires are of great interest as nanoscale building blocks for high-efficiency thermoelectric devices. Their lowdimensional character leads to an enhanced figure-of-merit (ZT), an indicator of thermoelectric efficiency. Herein, we report the invention of a direct growth method termed On-Film Formation of Nanowires (OFF-ON) for making high-quality single-crystal compound semiconductor nanowires, that is, Bi2Te3, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal compound semiconductor Bi2Te3 nanowires from sputtered BiTe films after thermal annealing at 350 °C. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. OFF-ON is a simple but powerful method for growing perfect single-crystal compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering