Direct observation of leakage currents in a metal-insulator-metal capacitor using in situ transmission electron microscopy

Kangsik Kim, Jung Hwa Kim, Bo Eun Park, Hyungjun Kim, Zonghoon Lee

Research output: Contribution to journalArticle

Abstract

With the acceleration of the scaling down of integrated circuits, it has become very challenging to fabricate a metal-insulator-metal (MIM) capacitor with a high capacitance density and low leakage current for nanoscale dynamic random access memory. Yttria-stabilized-zirconia (YSZ) thin films, one of the insulators in the constitution of MIM capacitors, have been reported to have various crystal structures from the monoclinic phase to the cubic phase according to different Y doping levels. The electrical characteristics depend on the crystal structure of the YSZ thin film. Here, we report the local crystallization of YSZ thin films via Joule heating and the leakage current induced during in situ transmission electron microscopy biasing tests. We studied the crystallization process and the increase in the leakage current using experimental and simulation results. It is important to understand the relationship between the crystallinity and electrical properties of YSZ thin films in MIM capacitors.

Original languageEnglish
Article number435705
JournalNanotechnology
Volume29
Issue number43
DOIs
Publication statusPublished - 2018 Aug 28

Fingerprint

Leakage currents
Capacitors
Metals
Yttria stabilized zirconia
Transmission electron microscopy
Thin films
Crystallization
Crystal structure
Joule heating
Integrated circuits
Electric properties
Capacitance
Doping (additives)
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "With the acceleration of the scaling down of integrated circuits, it has become very challenging to fabricate a metal-insulator-metal (MIM) capacitor with a high capacitance density and low leakage current for nanoscale dynamic random access memory. Yttria-stabilized-zirconia (YSZ) thin films, one of the insulators in the constitution of MIM capacitors, have been reported to have various crystal structures from the monoclinic phase to the cubic phase according to different Y doping levels. The electrical characteristics depend on the crystal structure of the YSZ thin film. Here, we report the local crystallization of YSZ thin films via Joule heating and the leakage current induced during in situ transmission electron microscopy biasing tests. We studied the crystallization process and the increase in the leakage current using experimental and simulation results. It is important to understand the relationship between the crystallinity and electrical properties of YSZ thin films in MIM capacitors.",
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Direct observation of leakage currents in a metal-insulator-metal capacitor using in situ transmission electron microscopy. / Kim, Kangsik; Kim, Jung Hwa; Park, Bo Eun; Kim, Hyungjun; Lee, Zonghoon.

In: Nanotechnology, Vol. 29, No. 43, 435705, 28.08.2018.

Research output: Contribution to journalArticle

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