Direct observation of the semimetal-to-semiconductor transition of individual single-crystal bismuth nanowires grown by on-film formation of nanowires

Seunghyun Lee, Jinhee Ham, Kyejin Jeon, Jin Seo Noh, Wooyoung Lee

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We have systematically investigated the semimetal-to-semiconductor transition of individual single-crystalline Bi nanowires. For this work, we developed a technique to reduce the diameter of Bi nanowires grown by our unique on-film formation of nanowires (OFF-ON) method. Cooling down the substrate temperature during Bi film deposition by use of liquid nitrogen, film structures with small-sized grains were obtained. Through thermal annealing of these fine-granular Bi films, single-crystalline Bi nanowires can be produced with minimum diameter of ∼20 nm. Elaborative nanofabrication techniques were employed to shape state-of-the-art four-probe devices based on the individual small diameter Bi nanowires. Diameter-dependent transport measurements on the individual Bi nanowires revealed that the semimetal-to-semiconductor transition really occurred at about dw = 63 nm. Moreover, band structure calculations supported this occurrence of the semimetal-to-semiconductor transition.

Original languageEnglish
Article number405701
JournalNanotechnology
Volume21
Issue number40
DOIs
Publication statusPublished - 2010 Oct 8

Fingerprint

Metalloids
Bismuth
Nanowires
Single crystals
Semiconductor materials
Crystalline materials
Liquid nitrogen
Nanotechnology
Band structure
Annealing
Cooling
Substrates

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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title = "Direct observation of the semimetal-to-semiconductor transition of individual single-crystal bismuth nanowires grown by on-film formation of nanowires",
abstract = "We have systematically investigated the semimetal-to-semiconductor transition of individual single-crystalline Bi nanowires. For this work, we developed a technique to reduce the diameter of Bi nanowires grown by our unique on-film formation of nanowires (OFF-ON) method. Cooling down the substrate temperature during Bi film deposition by use of liquid nitrogen, film structures with small-sized grains were obtained. Through thermal annealing of these fine-granular Bi films, single-crystalline Bi nanowires can be produced with minimum diameter of ∼20 nm. Elaborative nanofabrication techniques were employed to shape state-of-the-art four-probe devices based on the individual small diameter Bi nanowires. Diameter-dependent transport measurements on the individual Bi nanowires revealed that the semimetal-to-semiconductor transition really occurred at about dw = 63 nm. Moreover, band structure calculations supported this occurrence of the semimetal-to-semiconductor transition.",
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Direct observation of the semimetal-to-semiconductor transition of individual single-crystal bismuth nanowires grown by on-film formation of nanowires. / Lee, Seunghyun; Ham, Jinhee; Jeon, Kyejin; Noh, Jin Seo; Lee, Wooyoung.

In: Nanotechnology, Vol. 21, No. 40, 405701, 08.10.2010.

Research output: Contribution to journalArticle

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