Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography

Kyung Yoon Bo, Wonseok Hwang, Jung Park Youn, Jiyoung Hwang, Cheolmin Park, Joonyeon Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nanopattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

Original languageEnglish
Pages (from-to)435-440
Number of pages6
JournalMacromolecular Research
Volume13
Issue number5
Publication statusPublished - 2005 Oct 1

Fingerprint

Electron beam lithography
Block copolymers
Masks
Polymethyl Methacrylate
Polymethyl methacrylates
Electron beams
Chromium
Evaporation
Nanoparticles
Thin films

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Organic Chemistry
  • Polymers and Plastics
  • Materials Chemistry

Cite this

Bo, Kyung Yoon ; Hwang, Wonseok ; Youn, Jung Park ; Hwang, Jiyoung ; Park, Cheolmin ; Chang, Joonyeon. / Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography. In: Macromolecular Research. 2005 ; Vol. 13, No. 5. pp. 435-440.
@article{dba234116e3f45ac830dfa68e892b4a9,
title = "Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography",
abstract = "This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nanopattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.",
author = "Bo, {Kyung Yoon} and Wonseok Hwang and Youn, {Jung Park} and Jiyoung Hwang and Cheolmin Park and Joonyeon Chang",
year = "2005",
month = "10",
day = "1",
language = "English",
volume = "13",
pages = "435--440",
journal = "Macromolecular Research",
issn = "1598-5032",
publisher = "Polymer Society of Korea",
number = "5",

}

Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography. / Bo, Kyung Yoon; Hwang, Wonseok; Youn, Jung Park; Hwang, Jiyoung; Park, Cheolmin; Chang, Joonyeon.

In: Macromolecular Research, Vol. 13, No. 5, 01.10.2005, p. 435-440.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography

AU - Bo, Kyung Yoon

AU - Hwang, Wonseok

AU - Youn, Jung Park

AU - Hwang, Jiyoung

AU - Park, Cheolmin

AU - Chang, Joonyeon

PY - 2005/10/1

Y1 - 2005/10/1

N2 - This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nanopattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

AB - This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nanopattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

UR - http://www.scopus.com/inward/record.url?scp=27744574133&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744574133&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:27744574133

VL - 13

SP - 435

EP - 440

JO - Macromolecular Research

JF - Macromolecular Research

SN - 1598-5032

IS - 5

ER -