The optical and electrical properties were characterized with direct-patternable SnO2 thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors. Fourier transform infrared spectroscopic analysis showed that a complete removal of organic groups was possible by an exposure of spin-coated SnO2 precursor film to UV at room temperature. According to the increase in anneal temperature, i.e., amelioration in the crystallinity and structural homogeneity of SnO2 film, optical transmission and resistivity improved; especially in case of optical transmission, there was also an effect from the decrease in film thickness. Direct-patternable SnO2 film annealed at 800 °C showed the values of average transmittance in visible region and resistivity as 92.28% and 1.61 × 10-2 Ω cm, respectively.
Bibliographical noteFunding Information:
This work was supported by grant no. F01-2004-000-10093-0 from the International Cooperative Research Program of the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering