Direct-patterning of SnO2 thin film by photochemical metal-organic deposition

Hyeong Ho Park, Hyung-Ho Park, Ross H. Hill

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The optical and electrical properties were characterized with direct-patternable SnO2 thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors. Fourier transform infrared spectroscopic analysis showed that a complete removal of organic groups was possible by an exposure of spin-coated SnO2 precursor film to UV at room temperature. According to the increase in anneal temperature, i.e., amelioration in the crystallinity and structural homogeneity of SnO2 film, optical transmission and resistivity improved; especially in case of optical transmission, there was also an effect from the decrease in film thickness. Direct-patternable SnO2 film annealed at 800 °C showed the values of average transmittance in visible region and resistivity as 92.28% and 1.61 × 10-2 Ω cm, respectively.

Original languageEnglish
Pages (from-to)429-433
Number of pages5
JournalSensors and Actuators, A: Physical
Volume132
Issue number2
DOIs
Publication statusPublished - 2006 Nov 20

Fingerprint

Light transmission
Metals
Thin films
Spectroscopic analysis
thin films
metals
Film thickness
Fourier transforms
Electric properties
electrical resistivity
Optical properties
spectroscopic analysis
Infrared radiation
Temperature
homogeneity
crystallinity
transmittance
film thickness
electrical properties
optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

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abstract = "The optical and electrical properties were characterized with direct-patternable SnO2 thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors. Fourier transform infrared spectroscopic analysis showed that a complete removal of organic groups was possible by an exposure of spin-coated SnO2 precursor film to UV at room temperature. According to the increase in anneal temperature, i.e., amelioration in the crystallinity and structural homogeneity of SnO2 film, optical transmission and resistivity improved; especially in case of optical transmission, there was also an effect from the decrease in film thickness. Direct-patternable SnO2 film annealed at 800 °C showed the values of average transmittance in visible region and resistivity as 92.28{\%} and 1.61 × 10-2 Ω cm, respectively.",
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Direct-patterning of SnO2 thin film by photochemical metal-organic deposition. / Park, Hyeong Ho; Park, Hyung-Ho; Hill, Ross H.

In: Sensors and Actuators, A: Physical, Vol. 132, No. 2, 20.11.2006, p. 429-433.

Research output: Contribution to journalArticle

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