Direct photo-patternable organic-inorganic hybrid gate dielectric for organic thin-film transistors: Influence of the ZrO2 content

Seong Hui Lee, Sunho Jeong, Jooho Moon, Jun Kwang Song

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An inorganic-organic hybrid gate dielectric was synthesized in a sol-gel reaction. 3-methacry loxypropyltrimethoxysilane serves as both an organosiloxane network former and an organic functional group whose photo-polymerization can permit negative-type photo-patternability. Addition of zirconium alkoxide leads to the uniform incorporation of ZrO2 distributed in the matrix phase. At 170 °C, the obtained hybrid dielectric exhibits a smooth surface structure with an RMS roughness of ∼0.25 nm. The dielectric strength of the film was determined to be 1.2 ∼ 2.3 MV/cm. Increasing the amount of zirconium alkoxide effectively enhances the dielectric constant of the hybrid films from 5.3 to 6.6. The use of the gate dielectric with a high dielectric constant proves to be beneficial for fabricating an organic thin-film transistor. The organic thin-film transistor fabricated using the hybrid dielectric with a high dielectric constant shows a very low threshold voltage close to ̈0.4 V without deteriorating carrier mobility.

Original languageEnglish
Pages (from-to)754-759
Number of pages6
JournalJournal of the Korean Physical Society
Volume54
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

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transistors
thin films
alkoxides
permittivity
carrier mobility
threshold voltage
low voltage
roughness
polymerization
gels
matrices

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "An inorganic-organic hybrid gate dielectric was synthesized in a sol-gel reaction. 3-methacry loxypropyltrimethoxysilane serves as both an organosiloxane network former and an organic functional group whose photo-polymerization can permit negative-type photo-patternability. Addition of zirconium alkoxide leads to the uniform incorporation of ZrO2 distributed in the matrix phase. At 170 °C, the obtained hybrid dielectric exhibits a smooth surface structure with an RMS roughness of ∼0.25 nm. The dielectric strength of the film was determined to be 1.2 ∼ 2.3 MV/cm. Increasing the amount of zirconium alkoxide effectively enhances the dielectric constant of the hybrid films from 5.3 to 6.6. The use of the gate dielectric with a high dielectric constant proves to be beneficial for fabricating an organic thin-film transistor. The organic thin-film transistor fabricated using the hybrid dielectric with a high dielectric constant shows a very low threshold voltage close to ̈0.4 V without deteriorating carrier mobility.",
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Direct photo-patternable organic-inorganic hybrid gate dielectric for organic thin-film transistors : Influence of the ZrO2 content. / Lee, Seong Hui; Jeong, Sunho; Moon, Jooho; Song, Jun Kwang.

In: Journal of the Korean Physical Society, Vol. 54, No. 2, 01.02.2009, p. 754-759.

Research output: Contribution to journalArticle

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AU - Song, Jun Kwang

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