Direct photopatternable organic-inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors

Yangho Jung, Taewhan Jun, Areum Kim, Keunkyu Song, Tae Hoon Yeo, Jooho Moon

Research output: Contribution to journalArticle

29 Citations (Scopus)


A direct photopatternable organosiloxane-based organic-inorganic hybrid gate dielectric was synthesized. The sol-gel derived hybrid dielectric could be cured at a temperature sufficiently low enough to apply to temperature-sensitive polymeric substrates, whilst maintaining good electrical properties. The addition of hexa(methoxymethyl)melamine minimizes the polar silanol group by enhancing the cross-linking reaction and improves the film density, so that the resulting hybrid dielectric retains both thermal and chemical stability against the highly basic aqueous semiconductor precursor, forming a coherent interface between the dielectric and the semiconductor. The synthesized hybrid materials allow for a high-performance solution-processed flexible ZnO transistor on polymeric substrate at 150 °C.

Original languageEnglish
Pages (from-to)11879-11885
Number of pages7
JournalJournal of Materials Chemistry
Issue number32
Publication statusPublished - 2011 Aug 28


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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