Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties

Jae Bok Lee, Yi Rang Lim, Ajit K. Katiyar, Wooseok Song, Jongsun Lim, Sukang Bae, Tae Wook Kim, Seoung Ki Lee, Jong Hyun Ahn

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p–n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W−1 and response speed of 16 µs. As a feasible application, a WSe2/MoS2-based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.

Original languageEnglish
Article number1904194
JournalAdvanced Materials
Volume31
Issue number43
DOIs
Publication statusPublished - 2019 Oct 1

Fingerprint

Heterojunctions
Optoelectronic devices
Wire
Logic devices
Photodiodes
Transition metals
Light sources

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Jae Bok ; Lim, Yi Rang ; Katiyar, Ajit K. ; Song, Wooseok ; Lim, Jongsun ; Bae, Sukang ; Kim, Tae Wook ; Lee, Seoung Ki ; Ahn, Jong Hyun. / Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties. In: Advanced Materials. 2019 ; Vol. 31, No. 43.
@article{1dfe48e2de9743c1b95defb609bd0701,
title = "Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties",
abstract = "Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p–n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W−1 and response speed of 16 µs. As a feasible application, a WSe2/MoS2-based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.",
author = "Lee, {Jae Bok} and Lim, {Yi Rang} and Katiyar, {Ajit K.} and Wooseok Song and Jongsun Lim and Sukang Bae and Kim, {Tae Wook} and Lee, {Seoung Ki} and Ahn, {Jong Hyun}",
year = "2019",
month = "10",
day = "1",
doi = "10.1002/adma.201904194",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "43",

}

Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties. / Lee, Jae Bok; Lim, Yi Rang; Katiyar, Ajit K.; Song, Wooseok; Lim, Jongsun; Bae, Sukang; Kim, Tae Wook; Lee, Seoung Ki; Ahn, Jong Hyun.

In: Advanced Materials, Vol. 31, No. 43, 1904194, 01.10.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties

AU - Lee, Jae Bok

AU - Lim, Yi Rang

AU - Katiyar, Ajit K.

AU - Song, Wooseok

AU - Lim, Jongsun

AU - Bae, Sukang

AU - Kim, Tae Wook

AU - Lee, Seoung Ki

AU - Ahn, Jong Hyun

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p–n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W−1 and response speed of 16 µs. As a feasible application, a WSe2/MoS2-based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.

AB - Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p–n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W−1 and response speed of 16 µs. As a feasible application, a WSe2/MoS2-based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=85073679960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073679960&partnerID=8YFLogxK

U2 - 10.1002/adma.201904194

DO - 10.1002/adma.201904194

M3 - Article

C2 - 31512307

AN - SCOPUS:85073679960

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 43

M1 - 1904194

ER -