Polycrystalline cadmium telluride (CdTe) X-ray photodetector with advanced performance was fabricated in a Schottky diode form by direct thermal deposition (evaporation) on pixelized complementary metal oxide semiconductor (CMOS) readout panel. Our CdTe X-ray detector shows such a variety of benefits as relatively low process temperature, low cost, low operation voltage less than 40 V, and higher sensitivity and spatial resolution than those of commercial a-Se detectors. CdTe has cubic Zinc Blende structure and maintains p-type conduction after growth in general. For low voltage operation, we succeeded in Cl doping at all stage of CdTe film deposition, and as a result, hole concentration of p-type CdTe was reduced to ~1012 cm−3 from ~1015 cm−3, and such concentration reduction could enable our Schottky diode with Ti electrode to operate at a reverse bias of less than 40 V. Our CdTe Schottky diode/CMOS pixel array as a direct conversion type imager demonstrates much higher resolution X-ray imaging in 7 × 9 cm2 large scale than that of CsI/CMOS array, an indirect conversion imager. To our limited knowledge, our results on polycrystalline CdTe Schottky diode/CMOS array would be very novel as a first demonstration of active pixel sensor system equipped with directly deposited large scale X-ray detector.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No.2017R1A5A1014862, vdWMRC center), and Ministry of Trade, Industry and Energy (the Global Leading Technology Program: Grant No. 10042433-2012-11).
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