The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N 2 was used to grow Ti 0.8Ce 0.2n films on SiO 2 at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)