Directed nanostructural evolution in Ti 0.8Ce 0.2N layers grown as a function of low-energy, high-flux ion irradiation

T. Y. Lee; S. Kodambaka; J. G. Wen; R. D. Twesten; J. E. Greene; I. Petrov

doi:10.1063/1.1699468

Directed nanostructural evolution in Ti _0.8Ce _0.2N layers grown as a function of low-energy, high-flux ion irradiation

T. Y. Lee, S. Kodambaka, J. G. Wen, R. D. Twesten, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N ₂ was used to grow Ti _0.8Ce _0.2n films on SiO ₂ at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.

Original language	English
Pages (from-to)	2796-2798
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1699468
Publication status	Published - 2004 Apr 12

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1699468

Cite this

@article{ee8abffa2aae46b5962445fdb46cba04,

title = "Directed nanostructural evolution in Ti 0.8Ce 0.2N layers grown as a function of low-energy, high-flux ion irradiation",

abstract = "The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N 2 was used to grow Ti 0.8Ce 0.2n films on SiO 2 at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.",

author = "Lee, {T. Y.} and S. Kodambaka and Wen, {J. G.} and Twesten, {R. D.} and Greene, {J. E.} and I. Petrov",

year = "2004",

month = apr,

day = "12",

doi = "10.1063/1.1699468",

language = "English",

volume = "84",

pages = "2796--2798",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Directed nanostructural evolution in Ti 0.8Ce 0.2N layers grown as a function of low-energy, high-flux ion irradiation

AU - Lee, T. Y.

AU - Kodambaka, S.

AU - Wen, J. G.

AU - Twesten, R. D.

AU - Greene, J. E.

AU - Petrov, I.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N 2 was used to grow Ti 0.8Ce 0.2n films on SiO 2 at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.

AB - The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N 2 was used to grow Ti 0.8Ce 0.2n films on SiO 2 at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.

UR - http://www.scopus.com/inward/record.url?scp=2342612929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342612929&partnerID=8YFLogxK

U2 - 10.1063/1.1699468

DO - 10.1063/1.1699468

M3 - Article

AN - SCOPUS:2342612929

SN - 0003-6951

VL - 84

SP - 2796

EP - 2798

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Directed nanostructural evolution in Ti _0.8Ce _0.2N layers grown as a function of low-energy, high-flux ion irradiation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this