Directed nanostructural evolution in Ti 0.8Ce 0.2N layers grown as a function of low-energy, high-flux ion irradiation

T. Y. Lee, S. Kodambaka, J. G. Wen, R. D. Twesten, J. E. Greene, I. Petrov

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The nanostructure of TiN-based layers was analyzed for combination of alloying and low-energy ion irradiation during film growth. The UHV reactive magnetron sputtering in N 2 was used to grow Ti 0.8Ce 0.2n films on SiO 2 at 350°C. The layers were found to be dense, atomically flat, exhibited strong 002 texture and low stress. The ion-irradiation-induced effects and thermally driven Ce surface segregation were the factors on which obtained nanostructures depended.

Original languageEnglish
Pages (from-to)2796-2798
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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