Discontinuous pn-heterojunction for organic thin film transistors

Boeun Cho, Seong Hun Yu, Minwoo Kim, Moo Hyung Lee, Wansoo Huh, Jiyoul Lee, Jungwook Kim, Jeong Ho Cho, Jun Young Lee, Young Jae Song, Moon Sung Kang

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10 Citations (Scopus)

Abstract

Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type pentacene OTFTs. A more pronounced impact of the discontinuous upper layer is obtained on the transistor performances when thinner base layers are employed; a >100-fold enhancement in hole mobility and a >20 V shift in threshold voltage are achieved after applying PTCDI-C8 discontinuously onto 2 nm thick pentacene thin films. Local surface potential measurements (Kelvin-probe force microscopy) and temperature-dependent transport measurements (77-300 K) reveal that the interfacial dipole formed at the pn-heterostructures effectively dopes the base pentacene films p-type and leads to a reduction in transport activation energy.

Original languageEnglish
Pages (from-to)18146-18152
Number of pages7
JournalJournal of Physical Chemistry C
Volume118
Issue number31
DOIs
Publication statusPublished - 2014 Aug 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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  • Cite this

    Cho, B., Yu, S. H., Kim, M., Lee, M. H., Huh, W., Lee, J., Kim, J., Cho, J. H., Lee, J. Y., Song, Y. J., & Kang, M. S. (2014). Discontinuous pn-heterojunction for organic thin film transistors. Journal of Physical Chemistry C, 118(31), 18146-18152. https://doi.org/10.1021/jp504114f