This paper demonstrates that the read output voltage difference between data and reference voltages in spin-transfer-torque magnetoresistive random access memory is not a single Gaussian distribution but composed of two Gaussian distributions. In addition, a multiple-point tail fitting yield estimation method is proposed to estimate read yield with high accuracy. Monte Carlo HSPICE simulation results, based on industry-compatible 45-nm model parameters, show that the proposed multiple-point tail fitting method improves accuracy by 10x, 4.8x, and 1.9x compared with the normal fitting, importance sampling, and two-point tail fitting methods, respectively.
|Number of pages||10|
|Journal||Journal of Semiconductor Technology and Science|
|Publication status||Published - 2020 Jun|
Bibliographical noteFunding Information:
This work was supported by Incheon National University Research Grant in 2019.
© 2020, Institute of Electronics Engineers of Korea. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering