Distribution of S in (NH 4) 2S X-treated GaAs surfaces

Ji Wan Kim, Min Gu Kang, Hyung Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

After treating GaAs using HCl- and (NH 4) 2S X-solutions, we investigated the atomic distribution and the chemical bonding states of the treated surfaces by using angle-resolved X-ray photoelectron spectroscopy and low-energy electron diffraction (LEED). The HCl-treated GaAs showed an Asrich surface containing elemental As, but the S-passivated GaAs surface had As-S bonds instead of elemental As. With the (NH 4) 2S X-treated GaAs, a more pronounced oscillation of the photoelectron intensities of Ga and As was observed than was observed with the HCl-treated one due to the angular effect. The spots observed in the LEED pattern for the S-passivated GaAs surface indicated that it had a (2×1)-reconstructed structure with a regular distribution of As-S bonds. After in-situ annealing under ultra-high vacuum conditions, As-S bonds changed to Ga-S bonds completely, and the photoelectron intensities of S showed a pronounced oscillation according to the polar angle. The polar-angle distribution showed that S dispersed and penetrated until the third layer and statistically occupied the As site in the zinc-blende structure. The LEED pattern of S-passivated GaAs after annealing showed a weak regular structure. This could be explained by anion exchange between As and S or by S occupying the vacant As sites formed during the anneal.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

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electron diffraction
photoelectrons
diffraction patterns
oscillations
annealing
ultrahigh vacuum
energy
zinc
photoelectron spectroscopy
anions
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Distribution of S in (NH 4) 2S X-treated GaAs surfaces",
abstract = "After treating GaAs using HCl- and (NH 4) 2S X-solutions, we investigated the atomic distribution and the chemical bonding states of the treated surfaces by using angle-resolved X-ray photoelectron spectroscopy and low-energy electron diffraction (LEED). The HCl-treated GaAs showed an Asrich surface containing elemental As, but the S-passivated GaAs surface had As-S bonds instead of elemental As. With the (NH 4) 2S X-treated GaAs, a more pronounced oscillation of the photoelectron intensities of Ga and As was observed than was observed with the HCl-treated one due to the angular effect. The spots observed in the LEED pattern for the S-passivated GaAs surface indicated that it had a (2×1)-reconstructed structure with a regular distribution of As-S bonds. After in-situ annealing under ultra-high vacuum conditions, As-S bonds changed to Ga-S bonds completely, and the photoelectron intensities of S showed a pronounced oscillation according to the polar angle. The polar-angle distribution showed that S dispersed and penetrated until the third layer and statistically occupied the As site in the zinc-blende structure. The LEED pattern of S-passivated GaAs after annealing showed a weak regular structure. This could be explained by anion exchange between As and S or by S occupying the vacant As sites formed during the anneal.",
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Distribution of S in (NH 4) 2S X-treated GaAs surfaces. / Kim, Ji Wan; Kang, Min Gu; Park, Hyung Ho.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999.

Research output: Contribution to journalArticle

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AU - Kang, Min Gu

AU - Park, Hyung Ho

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AB - After treating GaAs using HCl- and (NH 4) 2S X-solutions, we investigated the atomic distribution and the chemical bonding states of the treated surfaces by using angle-resolved X-ray photoelectron spectroscopy and low-energy electron diffraction (LEED). The HCl-treated GaAs showed an Asrich surface containing elemental As, but the S-passivated GaAs surface had As-S bonds instead of elemental As. With the (NH 4) 2S X-treated GaAs, a more pronounced oscillation of the photoelectron intensities of Ga and As was observed than was observed with the HCl-treated one due to the angular effect. The spots observed in the LEED pattern for the S-passivated GaAs surface indicated that it had a (2×1)-reconstructed structure with a regular distribution of As-S bonds. After in-situ annealing under ultra-high vacuum conditions, As-S bonds changed to Ga-S bonds completely, and the photoelectron intensities of S showed a pronounced oscillation according to the polar angle. The polar-angle distribution showed that S dispersed and penetrated until the third layer and statistically occupied the As site in the zinc-blende structure. The LEED pattern of S-passivated GaAs after annealing showed a weak regular structure. This could be explained by anion exchange between As and S or by S occupying the vacant As sites formed during the anneal.

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