DNA-base guanine as hydrogen getter and charge-trapping layer embedded in oxide dielectrics for inorganic and organic field-effect transistors

Junyeong Lee, Ji Hoon Park, Young Tack Lee, Pyo Jin Jeon, Hee Sung Lee, Seung Hee Nam, Yeonjin Yi, Younjoo Lee, Seongil Im

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

DNA-base small molecules of guanine, cytosine, adenine, and thymine construct the DNA double helix structure with hydrogen bonding, and they possess such a variety of intrinsic benefits as natural plentitude, biodegradability, biofunctionality, low cost, and low toxicity. On the basis of these advantages, here, we report on unprecedented useful applications of guanine layer as hydrogen getter and charge trapping layer when it is embedded into a dielectric oxide of n-channel inorganic InGaZnO and p-channel organic heptazole field effect transistors (FETs). The embedded guanine layer much improved the gate stability of inorganic FETs gettering many hydrogen atoms in the gate dielectric layer of FET, and it also played as charge trapping layer to which the voltage pulse-driven charges might be injected from channel, resulting in a threshold voltage (Vth) shift of FETs. Such shift state is very ambient-stable and almost irrevocable even under a high electric-field at room temperature. So, Boolean logics are nicely demonstrated by using our FETs with the guanine-embedded dielectric. The original Vth is recovered only under high energy blue photons by opposite voltage pulse (charge-ejection), which indicates that our device is also applicable to nonvolatile photo memory.

Original languageEnglish
Pages (from-to)4965-4973
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
Publication statusPublished - 2014 Apr 9

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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