DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors

Youngsuk Cho, Junyeong Lee, June Yeong Lim, Sanghyuck Yu, Yeonjin Yi, Seongil Im

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between the Au electrodes and organic semiconductor, heptazole (C26H16N2). The heptazole-channel organic field effect transistors (OFETs) with a DNA-based small molecule charge injection layer showed higher hole mobility (maximum 0.12 cm2 V-1 s-1) than that of a pristine device (0.09 cm2 V-1 s-1). We characterized the contact resistance of each device by a transfer length method (TLM) and found that the guanine layer among all DNA-based materials performs best as a hole injection layer leading to the lowest contact resistance. Since the guanine layer is also known to be a proper channel passivation layer coupled with a thin conformal Al2O3 layer protecting the channel from bias stress and ambient molecules, we could realize ultra-stable OFETs utilizing guanine/Au contact and guanine/Al2O3 bilayer on the organic channel.

Original languageEnglish
Article number065107
JournalJournal of Physics D: Applied Physics
Volume50
Issue number6
DOIs
Publication statusPublished - 2017 Jan 13

Fingerprint

Organic field effect transistors
Charge injection
Guanine
Passivation
passivity
guanines
DNA
field effect transistors
deoxyribonucleic acid
Contact resistance
injection
Molecules
molecules
Hole mobility
Semiconducting organic compounds
contact resistance
Thymine
Cytosine
Adenine
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

@article{2c14ea638144440692d89528dd8d2895,
title = "DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors",
abstract = "DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between the Au electrodes and organic semiconductor, heptazole (C26H16N2). The heptazole-channel organic field effect transistors (OFETs) with a DNA-based small molecule charge injection layer showed higher hole mobility (maximum 0.12 cm2 V-1 s-1) than that of a pristine device (0.09 cm2 V-1 s-1). We characterized the contact resistance of each device by a transfer length method (TLM) and found that the guanine layer among all DNA-based materials performs best as a hole injection layer leading to the lowest contact resistance. Since the guanine layer is also known to be a proper channel passivation layer coupled with a thin conformal Al2O3 layer protecting the channel from bias stress and ambient molecules, we could realize ultra-stable OFETs utilizing guanine/Au contact and guanine/Al2O3 bilayer on the organic channel.",
author = "Youngsuk Cho and Junyeong Lee and Lim, {June Yeong} and Sanghyuck Yu and Yeonjin Yi and Seongil Im",
year = "2017",
month = "1",
day = "13",
doi = "10.1088/1361-6463/50/6/065107",
language = "English",
volume = "50",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "6",

}

DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors. / Cho, Youngsuk; Lee, Junyeong; Lim, June Yeong; Yu, Sanghyuck; Yi, Yeonjin; Im, Seongil.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 6, 065107, 13.01.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors

AU - Cho, Youngsuk

AU - Lee, Junyeong

AU - Lim, June Yeong

AU - Yu, Sanghyuck

AU - Yi, Yeonjin

AU - Im, Seongil

PY - 2017/1/13

Y1 - 2017/1/13

N2 - DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between the Au electrodes and organic semiconductor, heptazole (C26H16N2). The heptazole-channel organic field effect transistors (OFETs) with a DNA-based small molecule charge injection layer showed higher hole mobility (maximum 0.12 cm2 V-1 s-1) than that of a pristine device (0.09 cm2 V-1 s-1). We characterized the contact resistance of each device by a transfer length method (TLM) and found that the guanine layer among all DNA-based materials performs best as a hole injection layer leading to the lowest contact resistance. Since the guanine layer is also known to be a proper channel passivation layer coupled with a thin conformal Al2O3 layer protecting the channel from bias stress and ambient molecules, we could realize ultra-stable OFETs utilizing guanine/Au contact and guanine/Al2O3 bilayer on the organic channel.

AB - DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between the Au electrodes and organic semiconductor, heptazole (C26H16N2). The heptazole-channel organic field effect transistors (OFETs) with a DNA-based small molecule charge injection layer showed higher hole mobility (maximum 0.12 cm2 V-1 s-1) than that of a pristine device (0.09 cm2 V-1 s-1). We characterized the contact resistance of each device by a transfer length method (TLM) and found that the guanine layer among all DNA-based materials performs best as a hole injection layer leading to the lowest contact resistance. Since the guanine layer is also known to be a proper channel passivation layer coupled with a thin conformal Al2O3 layer protecting the channel from bias stress and ambient molecules, we could realize ultra-stable OFETs utilizing guanine/Au contact and guanine/Al2O3 bilayer on the organic channel.

UR - http://www.scopus.com/inward/record.url?scp=85011260724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011260724&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/50/6/065107

DO - 10.1088/1361-6463/50/6/065107

M3 - Article

AN - SCOPUS:85011260724

VL - 50

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 6

M1 - 065107

ER -