In situ phosphorus-doped epitaxial silicon films have attracted significant attention as source and drain materials because low specific contact resistivities have been achieved on such films by increasing the active carrier concentration using millisecond laser annealing. However, the active phosphorus concentration that can be achieved using millisecond laser annealing is much less than the incorporated concentration. To increase the activation efficiency, nanosecond laser annealing with a dwell time ≈104 times shorter than that of millisecond laser annealing is investigated and the diffusion, strain, microstructure, and electrical properties of single- and multipulse nanosecond laser-annealed samples are examined. The melting depth simulation classifies the energy density regions and explains the limited diffusion in nanosecond laser annealing. After multipulse nanosecond laser annealing, more phosphorus is activated without diffusion than by millisecond laser annealing. Moreover, almost all the incorporated phosphorus atoms are activated by the nanosecond laser, which melts in situ phosphorus-doped epitaxial silicon films without major strain loss. The increased active carrier concentration presents an opportunity to achieve low contact resistivity characteristics.
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2020 Jun 1|
Bibliographical noteFunding Information:
This work was financially supported by the Joint Program for Samsung Electronics-Yonsei University and the IT R&D program of MKE/KEIT (10067739, Development of Core Technologies for <5 nm Next-Generation Logic Devices). This article was amended on April 29, 2020 to correct the title of the article and the corresponding author?s e-mail address.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry