Dopant Activation of In Situ Phosphorus-Doped Silicon Using Multi-Pulse Nanosecond Laser Annealing

Hyunsu Shin, Minhyung Lee, Eunjung Ko, Hwa yoen Ryu, Seran Park, Eunha Kim, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In situ phosphorus-doped epitaxial silicon films have attracted significant attention as source and drain materials because low specific contact resistivities have been achieved on such films by increasing the active carrier concentration using millisecond laser annealing. However, the active phosphorus concentration that can be achieved using millisecond laser annealing is much less than the incorporated concentration. To increase the activation efficiency, nanosecond laser annealing with a dwell time ≈104 times shorter than that of millisecond laser annealing is investigated and the diffusion, strain, microstructure, and electrical properties of single- and multipulse nanosecond laser-annealed samples are examined. The melting depth simulation classifies the energy density regions and explains the limited diffusion in nanosecond laser annealing. After multipulse nanosecond laser annealing, more phosphorus is activated without diffusion than by millisecond laser annealing. Moreover, almost all the incorporated phosphorus atoms are activated by the nanosecond laser, which melts in situ phosphorus-doped epitaxial silicon films without major strain loss. The increased active carrier concentration presents an opportunity to achieve low contact resistivity characteristics.

Original languageEnglish
Article number1900988
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number12
Publication statusPublished - 2020 Jun 1

Bibliographical note

Funding Information:
This work was financially supported by the Joint Program for Samsung Electronics-Yonsei University and the IT R&D program of MKE/KEIT (10067739, Development of Core Technologies for <5 nm Next-Generation Logic Devices). This article was amended on April 29, 2020 to correct the title of the article and the corresponding author?s e-mail address.

Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Dopant Activation of In Situ Phosphorus-Doped Silicon Using Multi-Pulse Nanosecond Laser Annealing'. Together they form a unique fingerprint.

Cite this