Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

Useong Kim, Chulkwon Park, Taewoo Ha, Rokyeon Kim, Hyo Sik Mun, Hoon Min Kim, Hyung Joon Kim, Tai Hoon Kim, Namwook Kim, Jaejun Yu, Kee Hoon Kim, Jae Hoon Kim, Kookrin Char

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Abstract

We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3.We found that the electron mobility in BaSnO 3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in theBaSnO 3 system is strongly affected by the site at which the dopants are located. More importantly,we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

Original languageEnglish
Article number056107
JournalAPL Materials
Volume2
Issue number5
DOIs
Publication statusPublished - 2014 May

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Kim, U., Park, C., Ha, T., Kim, R., Mun, H. S., Kim, H. M., Kim, H. J., Kim, T. H., Kim, N., Yu, J., Kim, K. H., Kim, J. H., & Char, K. (2014). Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3. APL Materials, 2(5), [056107]. https://doi.org/10.1063/1.4874895