Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3

Jeong Hoon Lee, Kyu Hyoung Lee, Sung Wng Kim, Sang Il Kim, Soon Mok Choi, Jong Young Kim, Se Yun Kim, Jong Wook Roh, Hee Jung Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysica B: Condensed Matter
Volume517
DOIs
Publication statusPublished - 2017 Jul 15

Fingerprint

Vanadium
vanadium
Doping (additives)
engineering
Phonon scattering
Factor V
Spark plasma sintering
Point defects
sparks
Fermi level
Transport properties
point defects
solidification
Solidification
Thermal conductivity
sintering
Substitution reactions
thermal conductivity
transport properties
substitutes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lee, Jeong Hoon ; Lee, Kyu Hyoung ; Kim, Sung Wng ; Kim, Sang Il ; Choi, Soon Mok ; Kim, Jong Young ; Kim, Se Yun ; Roh, Jong Wook ; Park, Hee Jung. / Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3 In: Physica B: Condensed Matter. 2017 ; Vol. 517. pp. 1-5.
@article{d413b0172ccc470d8baba7115e5d2bfb,
title = "Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3",
abstract = "Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at{\%} V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).",
author = "Lee, {Jeong Hoon} and Lee, {Kyu Hyoung} and Kim, {Sung Wng} and Kim, {Sang Il} and Choi, {Soon Mok} and Kim, {Jong Young} and Kim, {Se Yun} and Roh, {Jong Wook} and Park, {Hee Jung}",
year = "2017",
month = "7",
day = "15",
doi = "10.1016/j.physb.2017.05.007",
language = "English",
volume = "517",
pages = "1--5",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3 . / Lee, Jeong Hoon; Lee, Kyu Hyoung; Kim, Sung Wng; Kim, Sang Il; Choi, Soon Mok; Kim, Jong Young; Kim, Se Yun; Roh, Jong Wook; Park, Hee Jung.

In: Physica B: Condensed Matter, Vol. 517, 15.07.2017, p. 1-5.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3

AU - Lee, Jeong Hoon

AU - Lee, Kyu Hyoung

AU - Kim, Sung Wng

AU - Kim, Sang Il

AU - Choi, Soon Mok

AU - Kim, Jong Young

AU - Kim, Se Yun

AU - Roh, Jong Wook

AU - Park, Hee Jung

PY - 2017/7/15

Y1 - 2017/7/15

N2 - Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

AB - Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

UR - http://www.scopus.com/inward/record.url?scp=85018429687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018429687&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2017.05.007

DO - 10.1016/j.physb.2017.05.007

M3 - Article

AN - SCOPUS:85018429687

VL - 517

SP - 1

EP - 5

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -