Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3

Jeong Hoon Lee, Kyu Hyoung Lee, Sung Wng Kim, Sang Il Kim, Soon Mok Choi, Jong Young Kim, Se Yun Kim, Jong Wook Roh, Hee Jung Park

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4 Citations (Scopus)


Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysica B: Condensed Matter
Publication statusPublished - 2017 Jul 15

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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